Integrated Silicon Solution, Inc. Memory IS42SM16800E-75ETLI

Description
SDRAM - Mobile Memory IC 128Mb (8M x 16) Parallel 133MHz 5.4ns 54-TFBGA (8x8)
Request a Quote Datasheet
Description
SDRAM - Mobile Memory IC 128Mb (8M x 16) Parallel 133MHz 5.4ns 54-TFBGA (8x8)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS42SM16800E-75ETLI-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile Memory IC 128Mb (8M x 16) Parallel 133MHz 5.4ns 54-TFBGA (8x8)

SDRAM - Mobile Memory IC 128Mb (8M x 16) Parallel 133MHz 5.4ns 54-TFBGA (8x8)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS42SM16800E-75ETLI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS42SM16800E-75ETLI
Integrated Circuits (ICs) - Memory IS42SM16800E-75ETLI
IC DRAM 128MBIT PARALLEL 54TFBGA

IC DRAM 128MBIT PARALLEL 54TFBGA

Supplier's Site
IC DRAM 128MBIT PARALLEL 54TFBGA

IC DRAM 128MBIT PARALLEL 54TFBGA

Supplier's Site Datasheet
Memory - IS42SM16800E-75ETLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile Memory IC 128Mbit Parallel 133 MHz 5.4 ns 54-TFBGA (8x8)

SDRAM - Mobile Memory IC 128Mbit Parallel 133 MHz 5.4 ns 54-TFBGA (8x8)

Buy Now Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS42SM16800E-75ETLI-ND IS42SM16800E-75ETLI IS42SM16800E-75ETLI IS42SM16800E-75ETLI
Product Name Memory Integrated Circuits (ICs) - Memory Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 128000 kbits 128000 kbits 128000 kbits 128000 kbits
Package Type 54-TFBGA BGA BGA; 54-TFBGA
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 2420769 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 128000 k
View Details
Rochester Electronics
Specs
Memory Category DRAM; DRAM Chip
Access Time 5.4 ns
Density 256000 kbits
View Details
Memory IC and Storage Component - 774-HYE18L256160BC-7.5 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category DRAM Chip
View Details
Memory - MYX4DD3K128M64PBG2 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DDR3
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 1024000 kbits
View Details