SDRAM - Mobile Memory IC 256Mb (16M x 16) Parallel 166MHz 5.5ns 54-TFBGA (8x8)
256M, 3.3V, Mobile SDRAM, 16Mx16, 166Mhz, 54 ball BGA (8Mm x 8mm) RoHS, IT, T&R
SDRAM - Mobile Memory IC 256Mbit Parallel 166 MHz 5.5 ns 54-TFBGA (8x8)
IC DRAM 256MBIT PARALLEL 54TFBGA
IC DRAM 256MBIT PARALLEL 54TFBGA
| DigiKey | Newark, An Avnet Company | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS42SM16160K-6BLI-TR-ND | 29X5160 | IS42SM16160K-6BLI-TR | IS42SM16160K-6BLI-TR | IS42SM16160K-6BLI-TR |
| Product Name | Memory | 256M, 3.3V, Mobile Sdram, 16Mx16, 166Mhz, 54 Ball Bga (8Mm X 8Mm) Rohs, It, T&r Integrated Silicon Solution (Issi) | Memory | Integrated Circuits (ICs) - Memory | Memory |
| Memory Category | DRAM Chip | DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Density | 256000 kbits | 256000 kbits | 256000 kbits | 256000 kbits | |
| Package Type | 54-TFBGA | BGA; 54-TFBGA | BGA |
