Integrated Silicon Solution, Inc. Memory IS43DR82560B-3DBLI

Description
SDRAM - DDR2 Memory IC 2Gbit Parallel 333 MHz 450 ps 60-TWBGA (10.5x13)
Datasheet
Description
SDRAM - DDR2 Memory IC 2Gbit Parallel 333 MHz 450 ps 60-TWBGA (10.5x13)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS43DR82560B-3DBLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 2Gbit Parallel 333 MHz 450 ps 60-TWBGA (10.5x13)

SDRAM - DDR2 Memory IC 2Gbit Parallel 333 MHz 450 ps 60-TWBGA (10.5x13)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS43DR82560B-3DBLI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS43DR82560B-3DBLI
Integrated Circuits (ICs) - Memory IS43DR82560B-3DBLI
IC DRAM 2GBIT PARALLEL 60TWBGA

IC DRAM 2GBIT PARALLEL 60TWBGA

Supplier's Site
IC DRAM 2GBIT PARALLEL 60TWBGA

IC DRAM 2GBIT PARALLEL 60TWBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS43DR82560B-3DBLI IS43DR82560B-3DBLI IS43DR82560B-3DBLI
Product Name Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 0.4500 ns 0.4500 ns 0.4500 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 2000000 kbits 2000000 kbits 2000000 kbits
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