Integrated Silicon Solution, Inc. Integrated Circuits (ICs) - Memory IS43DR82560B-3DBLI

Description
IC DRAM 2GBIT PARALLEL 60TWBGA
Datasheet
Description
IC DRAM 2GBIT PARALLEL 60TWBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - IS43DR82560B-3DBLI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS43DR82560B-3DBLI
Integrated Circuits (ICs) - Memory IS43DR82560B-3DBLI
IC DRAM 2GBIT PARALLEL 60TWBGA

IC DRAM 2GBIT PARALLEL 60TWBGA

Supplier's Site
IC DRAM 2GBIT PARALLEL 60TWBGA

IC DRAM 2GBIT PARALLEL 60TWBGA

Supplier's Site Datasheet
Memory - IS43DR82560B-3DBLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 2Gbit Parallel 333 MHz 450 ps 60-TWBGA (10.5x13)

SDRAM - DDR2 Memory IC 2Gbit Parallel 333 MHz 450 ps 60-TWBGA (10.5x13)

Buy Now Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS43DR82560B-3DBLI IS43DR82560B-3DBLI IS43DR82560B-3DBLI
Product Name Integrated Circuits (ICs) - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Data Rate 333 MHz
Access Time 0.4500 ns 0.4500 ns 0.4500 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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