SDRAM - Mobile Memory IC 512Mb (32M x 16) Parallel 133MHz 6ns 54-TFBGA (8x8)
512M, 1.8V, Mobile SDRAM, 32Mx16, 133Mhz, 54 ball BGA (8Mm x 8mm) RoHS
SDRAM - Mobile Memory IC 512Mbit Parallel 133 MHz 6 ns 54-TFBGA (8x8)
IC DRAM 512MBIT PARALLEL 54TFBGA
IC DRAM 512MBIT PARALLEL 54TFBGA
| DigiKey | Newark, An Avnet Company | Quarktwin Technology Ltd. | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS42VM16320E-75BLI-ND | 29X5181 | IS42VM16320E-75BLI | IS42VM16320E-75BLI | IS42VM16320E-75BLI |
| Product Name | Memory | 512M, 1.8V, Mobile Sdram, 32Mx16, 133Mhz, 54 Ball Bga (8Mm X 8Mm) Rohs Integrated Silicon Solution (Issi) | Memory | Memory | Integrated Circuits (ICs) - Memory |
| Memory Category | DRAM Chip | DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Density | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | |
| Package Type | 54-TFBGA | BGA; 54-TFBGA | BGA |
