Integrated Silicon Solution, Inc. Memory IS42VM16320E-75BLI

Description
SDRAM - Mobile Memory IC 512Mb (32M x 16) Parallel 133MHz 6ns 54-TFBGA (8x8)
Request a Quote Datasheet
Description
SDRAM - Mobile Memory IC 512Mb (32M x 16) Parallel 133MHz 6ns 54-TFBGA (8x8)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS42VM16320E-75BLI-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile Memory IC 512Mb (32M x 16) Parallel 133MHz 6ns 54-TFBGA (8x8)

SDRAM - Mobile Memory IC 512Mb (32M x 16) Parallel 133MHz 6ns 54-TFBGA (8x8)

Buy Now Datasheet
512M, 1.8V, Mobile Sdram, 32Mx16, 133Mhz, 54 Ball Bga (8Mm X 8Mm) Rohs Integrated Silicon Solution (Issi) - 29X5181 - Newark, An Avnet Company
Chicago, IL, United States
512M, 1.8V, Mobile Sdram, 32Mx16, 133Mhz, 54 Ball Bga (8Mm X 8Mm) Rohs Integrated Silicon Solution (Issi)
29X5181
512M, 1.8V, Mobile Sdram, 32Mx16, 133Mhz, 54 Ball Bga (8Mm X 8Mm) Rohs Integrated Silicon Solution (Issi) 29X5181
512M, 1.8V, Mobile SDRAM, 32Mx16, 133Mhz, 54 ball BGA (8Mm x 8mm) RoHS

512M, 1.8V, Mobile SDRAM, 32Mx16, 133Mhz, 54 ball BGA (8Mm x 8mm) RoHS

Supplier's Site
IC DRAM 512MBIT PARALLEL 54TFBGA

IC DRAM 512MBIT PARALLEL 54TFBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - IS42VM16320E-75BLI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS42VM16320E-75BLI
Integrated Circuits (ICs) - Memory IS42VM16320E-75BLI
IC DRAM 512MBIT PARALLEL 54TFBGA

IC DRAM 512MBIT PARALLEL 54TFBGA

Supplier's Site
Memory - IS42VM16320E-75BLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile Memory IC 512Mbit Parallel 133 MHz 6 ns 54-TFBGA (8x8)

SDRAM - Mobile Memory IC 512Mbit Parallel 133 MHz 6 ns 54-TFBGA (8x8)

Buy Now Datasheet

Technical Specifications

  DigiKey Newark, An Avnet Company Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS42VM16320E-75BLI-ND 29X5181 IS42VM16320E-75BLI IS42VM16320E-75BLI IS42VM16320E-75BLI
Product Name Memory 512M, 1.8V, Mobile Sdram, 32Mx16, 133Mhz, 54 Ball Bga (8Mm X 8Mm) Rohs Integrated Silicon Solution (Issi) Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM Chip DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits 512000 kbits
Package Type 54-TFBGA BGA BGA; 54-TFBGA
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