Integrated Silicon Solution, Inc. Memory IS43DR81280B-25DBLI

Description
SDRAM - DDR2 Memory IC 1Gb (128M x 8) Parallel 400MHz 400ps 60-TWBGA (8x10.5)
Request a Quote Datasheet
Description
SDRAM - DDR2 Memory IC 1Gb (128M x 8) Parallel 400MHz 400ps 60-TWBGA (8x10.5)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS43DR81280B-25DBLI-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR2 Memory IC 1Gb (128M x 8) Parallel 400MHz 400ps 60-TWBGA (8x10.5)

SDRAM - DDR2 Memory IC 1Gb (128M x 8) Parallel 400MHz 400ps 60-TWBGA (8x10.5)

Buy Now Datasheet
Memory - SDRAM - IS43DR81280B-25DBLI - 738847-IS43DR81280B-25DBLI - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - IS43DR81280B-25DBLI
738847-IS43DR81280B-25DBLI
Memory - SDRAM - IS43DR81280B-25DBLI 738847-IS43DR81280B-25DBLI
Manufacturer: ISSI, Integrated Silicon Solution Inc Win Source Part Number: 738847-IS43DR81280B- 25DBLI Packaging: Tray Mounting Style: SMD Technology: SDRAM - DDR2 Memory Type: Volatile Memory Size: 1Gb (128M x 8) Access Time: 400ps Categories: Integrated Circuits Supplier Device Package: 60-TWBGA (8x10.5) Temperature Range - Operating: -40°C ~ 85°C Memory Format: DRAM Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Manufacturer Package: 60-TFBGA Popularity: Low Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 242 MSL Level: 3 (168 Hours) Supply Voltage (V): 1.7V ~ 1.9V

Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 738847-IS43DR81280B-25DBLI
Packaging: Tray
Mounting Style: SMD
Technology: SDRAM - DDR2
Memory Type: Volatile
Memory Size: 1Gb (128M x 8)
Access Time: 400ps
Categories: Integrated Circuits
Supplier Device Package: 60-TWBGA (8x10.5)
Temperature Range - Operating: -40°C ~ 85°C
Memory Format: DRAM
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Manufacturer Package: 60-TFBGA
Popularity: Low
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 242
MSL Level: 3 (168 Hours)
Supply Voltage (V): 1.7V ~ 1.9V

Buy Now
Memory IC and Storage Component - 774-IS43DR81280B-25DBLI - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-IS43DR81280B-25DBLI
Memory IC and Storage Component 774-IS43DR81280B-25DBLI
IC DRAM 1GBIT PARALLEL 60TWBGA Product overview: IS43DR81280B-25DBLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43DR81280B-25D BLI can be used for catalog matching and distributor lookup.

IC DRAM 1GBIT PARALLEL 60TWBGA Product overview: IS43DR81280B-25DBLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43DR81280B-25DBLI can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - IS43DR81280B-25DBLI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS43DR81280B-25DBLI
Integrated Circuits (ICs) - Memory IS43DR81280B-25DBLI
IC DRAM 1GBIT PARALLEL 60TWBGA

IC DRAM 1GBIT PARALLEL 60TWBGA

Supplier's Site
IC DRAM 1GBIT PARALLEL 60TWBGA

IC DRAM 1GBIT PARALLEL 60TWBGA

Supplier's Site Datasheet
Memory - IS43DR81280B-25DBLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 400 ps 60-TWBGA (8x10.5)

SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 400 ps 60-TWBGA (8x10.5)

Buy Now Datasheet
1G, 1.8V, Ddr2, 128Mx8, 400Mhz @cl5, 60 Ball Bga, (8Mm X 10.5Mm), Rohs, It Integrated Silicon Solution (Issi) - 18W6798 - Newark, An Avnet Company
Chicago, IL, United States
1G, 1.8V, Ddr2, 128Mx8, 400Mhz @cl5, 60 Ball Bga, (8Mm X 10.5Mm), Rohs, It Integrated Silicon Solution (Issi)
18W6798
1G, 1.8V, Ddr2, 128Mx8, 400Mhz @cl5, 60 Ball Bga, (8Mm X 10.5Mm), Rohs, It Integrated Silicon Solution (Issi) 18W6798
1G, 1.8V, DDR2, 128Mx8, 400Mhz @CL5, 60 ball BGA, (8Mm x 10.5mm), RoHS, IT

1G, 1.8V, DDR2, 128Mx8, 400Mhz @CL5, 60 ball BGA, (8Mm x 10.5mm), RoHS, IT

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd. Newark, An Avnet Company
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS43DR81280B-25DBLI-ND 738847-IS43DR81280B-25DBLI 774-IS43DR81280B-25DBLI IS43DR81280B-25DBLI IS43DR81280B-25DBLI IS43DR81280B-25DBLI 18W6798
Product Name Memory Memory - SDRAM - IS43DR81280B-25DBLI Memory IC and Storage Component Integrated Circuits (ICs) - Memory Memory Memory 1G, 1.8V, Ddr2, 128Mx8, 400Mhz @cl5, 60 Ball Bga, (8Mm X 10.5Mm), Rohs, It Integrated Silicon Solution (Issi)
Memory Category DRAM Chip Volatile; DRAM Chip DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 C (-40 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Package Type 60-TFBGA BGA BGA; 60-TFBGA
Supply Voltage 1.7V ~ 1.9V 1.7V ~ 1.9V 1.7 1.7V ~ 1.9V 1.7V ~ 1.9V
Access Time 0.4000 ns 0.4000 ns 0.4000 ns 0.4000 ns 0.4000 ns
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