Integrated Silicon Solution, Inc. Memory IS42VM16200D-75BLI

Description
IC DRAM 32MBIT PARALLEL 54TFBGA
Datasheet
Description
IC DRAM 32MBIT PARALLEL 54TFBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC DRAM 32MBIT PARALLEL 54TFBGA

IC DRAM 32MBIT PARALLEL 54TFBGA

Supplier's Site Datasheet
Memory - IS42VM16200D-75BLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile Memory IC 32Mbit Parallel 133 MHz 6 ns 54-TFBGA (8x8)

SDRAM - Mobile Memory IC 32Mbit Parallel 133 MHz 6 ns 54-TFBGA (8x8)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS42VM16200D-75BLI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS42VM16200D-75BLI
Integrated Circuits (ICs) - Memory IS42VM16200D-75BLI
IC DRAM 32MBIT PARALLEL 54TFBGA

IC DRAM 32MBIT PARALLEL 54TFBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS42VM16200D-75BLI IS42VM16200D-75BLI IS42VM16200D-75BLI
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 6 ns 6 ns 6 ns
Density 32000 kbits 32000 kbits 32000 kbits
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

 - NMC2147HF-3-MIL - Rochester Electronics
Texas Instruments
Specs
Memory Category SRAM Chip
Package Type FL18
View Details
3 suppliers
Memory - MT4C4001J - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 71256L100TDB - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 100 ns
Density 256 kbits
View Details