The IS43DR81280B-25EBL is a 1Gb DDR2 SDRAM memory chip from Quarktwin Technology Ltd., featuring a clock frequency of up to 400MHz. It supports a 4-bit prefetch architecture and has eight internal banks for concurrent operations. The device allows for programmable CAS latency options of 3, 4, 5, 6, and 7, as well as programmable additive latency and burst sequences. This memory chip operates at a supply voltage of 1.8V ¬± 0.1V and includes features such as automatic and controlled precharge commands, power down mode, and self-refresh capabilities. The refresh interval is specified at 7.8 ¬µs, and it supports on-die termination (ODT) and weak strength data-output driver options. The device is available in a 60-ball TW-BGA package, making it suitable for various applications requiring efficient memory solutions. The operating temperature range for this product is from 0¬8C to 70¬8C for commercial applications, with industrial and automotive options available for more demanding environments.
IC DRAM 1GBIT PARALLEL 60TWBGA
SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 450 ps 60-TWBGA (8x10.5)
IC DRAM 1GBIT PARALLEL 60TWBGA
| Lingto Electronic Limited | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS43DR81280B-25EBL | IS43DR81280B-25EBL | IS43DR81280B-25EBL |
| Product Name | Memory | Memory | Integrated Circuits (ICs) - Memory |
| Memory Category | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip |
| Access Time | 0.4500 ns | 0.4500 ns | 0.4500 ns |
| Density | 1000000 kbits | 1000000 kbits | 1000000 kbits |
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) |
