SDRAM - Mobile Memory IC 512Mb (32M x 16) Parallel 166MHz 5.5ns 54-TFBGA (8x13)
IC DRAM 512MBIT PAR 54TFBGA Product overview: IS42VM16320D-6BLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS42VM16320D-6BL
Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 921649-IS42VM16320D-
Operating Temperature Range: -40°C ~ 85°C (TA)
Features: SDRAM - Mobile Memory IC 512Mb (32M x 16) Parallel 166 MHz 5.5 ns 54-TFBGA (8x13)
Package: 54-TFBGA
Package: Tray
Mounting: Surface Mount
Family Name: IS42VM16320
Categories: Integrated Circuits (ICs)
Case / Package: 54-TFBGA (8x13)
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance
Quantity per package: 240
MSL Level: 3 (168 Hours)
Estimated Pruduction Lead Time: 19 Weeks
REACH Status: REACH Unaffected
HTSUS: 8542.32.0024
512M, 1.8V, Mobile SDRAM, 32Mx16, 166Mhz, 54 ball BGA (8Mm x 13mm) RoHS
IC DRAM 512MBIT PARALLEL 54TFBGA
IC DRAM 512MBIT PARALLEL 54TFBGA
SDRAM - Mobile Memory IC 512Mbit Parallel 166 MHz 5.5 ns 54-TFBGA (8x13)
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS42VM16320D-6BLI-ND | 774-IS42VM16320D-6BLI | 921649-IS42VM16320D-6BLI | 77T0548 | IS42VM16320D-6BLI | IS42VM16320D-6BLI | IS42VM16320D-6BLI |
| Product Name | Memory | Memory IC and Storage Component | Memory - SDRAM - IS42VM16320D-6BLI | 512M, 1.8V, Mobile Sdram, 32Mx16, 166Mhz, 54 Ball Bga (8Mm X 13Mm) Rohs Integrated Silicon Solution (Issi) | Memory | Integrated Circuits (ICs) - Memory | Memory |
| Memory Category | DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Density | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | |||
| Package Type | 54-TFBGA | BGA; Tray | BGA; 54-TFBGA (8x13) | BGA | BGA; 54-TFBGA | ||
| Supply Voltage | 1.7V ~ 1.95V | 1.7V ~ 1.95V | 1.7V ~ 1.95V | 1.7V ~ 1.95V |
