Integrated Silicon Solution, Inc. Memory - SDRAM - IS43DR16640B-3DBI-TR IS43DR16640B-3DBI-TR

Description
Manufacturer: ISSI, Integrated Silicon Solution Inc Win Source Part Number: 777177-IS43DR16640B- 3DBI-TR Packaging: Reel package Operating Temperature Range: -40°C ~ 85°C (TA) Package: 84-TFBGA Mounting: SMD Technology: SDRAM - DDR2 Operating Supply Voltage: 1.7 V ~ 1.9 V Memory Type: Volatile Memory Size: 1Gb (64M x 16) Access Time: 450ps Family Name: IS43DR16640B Categories: Integrated Circuits (ICs) Memory Format: DRAM Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Manufacturer Package: 84-TWBGA (8x12.5) Alternative Parts (Cross-Reference): IS46DR16640B-3DBLA1- TR; IS46DR16640BL-3DBLA1 ; IS46DR16640B-3DBLA1; H5PS1G63EFR-S5L; Introduction Date: January 20, 2012 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited
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Description
Manufacturer: ISSI, Integrated Silicon Solution Inc Win Source Part Number: 777177-IS43DR16640B- 3DBI-TR Packaging: Reel package Operating Temperature Range: -40°C ~ 85°C (TA) Package: 84-TFBGA Mounting: SMD Technology: SDRAM - DDR2 Operating Supply Voltage: 1.7 V ~ 1.9 V Memory Type: Volatile Memory Size: 1Gb (64M x 16) Access Time: 450ps Family Name: IS43DR16640B Categories: Integrated Circuits (ICs) Memory Format: DRAM Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Manufacturer Package: 84-TWBGA (8x12.5) Alternative Parts (Cross-Reference): IS46DR16640B-3DBLA1- TR; IS46DR16640BL-3DBLA1 ; IS46DR16640B-3DBLA1; H5PS1G63EFR-S5L; Introduction Date: January 20, 2012 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
Memory - SDRAM - IS43DR16640B-3DBI-TR - 777177-IS43DR16640B-3DBI-TR - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - IS43DR16640B-3DBI-TR
777177-IS43DR16640B-3DBI-TR
Memory - SDRAM - IS43DR16640B-3DBI-TR 777177-IS43DR16640B-3DBI-TR
Manufacturer: ISSI, Integrated Silicon Solution Inc Win Source Part Number: 777177-IS43DR16640B- 3DBI-TR Packaging: Reel package Operating Temperature Range: -40°C ~ 85°C (TA) Package: 84-TFBGA Mounting: SMD Technology: SDRAM - DDR2 Operating Supply Voltage: 1.7 V ~ 1.9 V Memory Type: Volatile Memory Size: 1Gb (64M x 16) Access Time: 450ps Family Name: IS43DR16640B Categories: Integrated Circuits (ICs) Memory Format: DRAM Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Manufacturer Package: 84-TWBGA (8x12.5) Alternative Parts (Cross-Reference): IS46DR16640B-3DBLA1- TR; IS46DR16640BL-3DBLA1 ; IS46DR16640B-3DBLA1; H5PS1G63EFR-S5L; Introduction Date: January 20, 2012 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Limited

Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 777177-IS43DR16640B-3DBI-TR
Packaging: Reel package
Operating Temperature Range: -40°C ~ 85°C (TA)
Package: 84-TFBGA
Mounting: SMD
Technology: SDRAM - DDR2
Operating Supply Voltage: 1.7 V ~ 1.9 V
Memory Type: Volatile
Memory Size: 1Gb (64M x 16)
Access Time: 450ps
Family Name: IS43DR16640B
Categories: Integrated Circuits (ICs)
Memory Format: DRAM
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Manufacturer Package: 84-TWBGA (8x12.5)
Alternative Parts (Cross-Reference): IS46DR16640B-3DBLA1-TR; IS46DR16640BL-3DBLA1; IS46DR16640B-3DBLA1; H5PS1G63EFR-S5L;
Introduction Date: January 20, 2012
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Memory - IS43DR16640B-3DBI-TR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR2 Memory IC 1Gb (64M x 16) Parallel 333MHz 450ps 84-TWBGA (8x12.5)

SDRAM - DDR2 Memory IC 1Gb (64M x 16) Parallel 333MHz 450ps 84-TWBGA (8x12.5)

Buy Now Datasheet
IC DRAM 1GBIT PARALLEL 84TWBGA

IC DRAM 1GBIT PARALLEL 84TWBGA

Supplier's Site Datasheet
Memory - IS43DR16640B-3DBI-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 1Gbit Parallel 333 MHz 450 ps 84-TWBGA (8x12.5)

SDRAM - DDR2 Memory IC 1Gbit Parallel 333 MHz 450 ps 84-TWBGA (8x12.5)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS43DR16640B-3DBI-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS43DR16640B-3DBI-TR
Integrated Circuits (ICs) - Memory IS43DR16640B-3DBI-TR
IC DRAM 1GBIT PARALLEL 84TWBGA

IC DRAM 1GBIT PARALLEL 84TWBGA

Supplier's Site
IC DRAM 1GBIT PARALLEL 84TWBGA

IC DRAM 1GBIT PARALLEL 84TWBGA

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 777177-IS43DR16640B-3DBI-TR IS43DR16640B-3DBI-TR-ND IS43DR16640B-3DBI-TR IS43DR16640B-3DBI-TR IS43DR16640B-3DBI-TR IS43DR16640B-3DBI-TR
Product Name Memory - SDRAM - IS43DR16640B-3DBI-TR Memory Memory Memory Integrated Circuits (ICs) - Memory Memory
Memory Category Volatile; DRAM Chip DRAM Chip SDRAM - DDR2; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 0.4500 ns 0.4500 ns 0.4500 ns 0.4500 ns 0.4500 ns
Cycle Time 15 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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