Integrated Silicon Solution, Inc. Memory IS43DR81280B-3DBL-TR

Description
SDRAM - DDR2 Memory IC 1Gb (128M x 8) Parallel 333MHz 450ps 60-TWBGA (8x10.5)
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Description
SDRAM - DDR2 Memory IC 1Gb (128M x 8) Parallel 333MHz 450ps 60-TWBGA (8x10.5)
Request a Quote
Datasheet
Datasheet Summary
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The IS43DR81280B-3DBL-TR is a 1Gb DDR2 SDRAM memory chip from Quarktwin Technology Ltd., featuring a clock frequency of up to 400MHz. It supports a 4-bit prefetch architecture and has eight internal banks for concurrent operations, enhancing performance in data-intensive applications. The memory offers programmable CAS latency options of 3, 4, 5, 6, and 7, along with programmable additive latency and burst lengths of 4 and 8. This memory chip operates at a supply voltage of 1.8V ¬± 0.1V and includes features such as automatic and controlled precharge commands, power down mode, and self-refresh capabilities. The device is available in a 60-ball TW-BGA package, making it suitable for compact designs. It is designed for commercial, industrial, and automotive applications, with operating temperature ranges from 0¬8C to 70¬8C for commercial use, and from -40¬8C to 105¬8C for automotive applications. Engineers considering this memory chip should evaluate its specifications against their project requirements, particularly in terms of speed, latency, and environmental conditions.

Datasheet Summary
Powered by GS/AI

The IS43DR81280B-3DBL-TR is a 1Gb DDR2 SDRAM memory chip from Quarktwin Technology Ltd., featuring a clock frequency of up to 400MHz. It supports a 4-bit prefetch architecture and has eight internal banks for concurrent operations, enhancing performance in data-intensive applications. The memory offers programmable CAS latency options of 3, 4, 5, 6, and 7, along with programmable additive latency and burst lengths of 4 and 8. This memory chip operates at a supply voltage of 1.8V ¬± 0.1V and includes features such as automatic and controlled precharge commands, power down mode, and self-refresh capabilities. The device is available in a 60-ball TW-BGA package, making it suitable for compact designs. It is designed for commercial, industrial, and automotive applications, with operating temperature ranges from 0¬8C to 70¬8C for commercial use, and from -40¬8C to 105¬8C for automotive applications. Engineers considering this memory chip should evaluate its specifications against their project requirements, particularly in terms of speed, latency, and environmental conditions.

Suppliers

Company
Product
Description
Supplier Links
Memory - IS43DR81280B-3DBL-TR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR2 Memory IC 1Gb (128M x 8) Parallel 333MHz 450ps 60-TWBGA (8x10.5)

SDRAM - DDR2 Memory IC 1Gb (128M x 8) Parallel 333MHz 450ps 60-TWBGA (8x10.5)

Buy Now Datasheet
Memory - IS43DR81280B-3DBL-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 1Gbit Parallel 333 MHz 450 ps 60-TWBGA (8x10.5)

SDRAM - DDR2 Memory IC 1Gbit Parallel 333 MHz 450 ps 60-TWBGA (8x10.5)

Buy Now Datasheet
1G, 1.8V, Ddr2, 128Mx8, 333Mhz @cl5, 60 Ball Bga, (8Mm X 10.5Mm), Rohs, T&r Integrated Silicon Solution (Issi) - 18W6805 - Newark, An Avnet Company
Chicago, IL, United States
1G, 1.8V, Ddr2, 128Mx8, 333Mhz @cl5, 60 Ball Bga, (8Mm X 10.5Mm), Rohs, T&r Integrated Silicon Solution (Issi)
18W6805
1G, 1.8V, Ddr2, 128Mx8, 333Mhz @cl5, 60 Ball Bga, (8Mm X 10.5Mm), Rohs, T&r Integrated Silicon Solution (Issi) 18W6805
1G, 1.8V, DDR2, 128Mx8, 333Mhz @CL5, 60 ball BGA, (8Mm x 10.5mm), RoHS, T&R

1G, 1.8V, DDR2, 128Mx8, 333Mhz @CL5, 60 ball BGA, (8Mm x 10.5mm), RoHS, T&R

Supplier's Site
Integrated Circuits (ICs) - Memory - IS43DR81280B-3DBL-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS43DR81280B-3DBL-TR
Integrated Circuits (ICs) - Memory IS43DR81280B-3DBL-TR
IC DRAM 1GBIT PARALLEL 60TWBGA

IC DRAM 1GBIT PARALLEL 60TWBGA

Supplier's Site
IC DRAM 1GBIT PARALLEL 60TWBGA

IC DRAM 1GBIT PARALLEL 60TWBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS43DR81280B-3DBL-TR-ND IS43DR81280B-3DBL-TR 18W6805 IS43DR81280B-3DBL-TR IS43DR81280B-3DBL-TR
Product Name Memory Memory 1G, 1.8V, Ddr2, 128Mx8, 333Mhz @cl5, 60 Ball Bga, (8Mm X 10.5Mm), Rohs, T&r Integrated Silicon Solution (Issi) Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Package Type 60-TFBGA BGA; 60-TFBGA BGA
Supply Voltage 1.7V ~ 1.9V 1.7V ~ 1.9V 1.7V ~ 1.9V
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