SDRAM - Mobile Memory IC 128Mb (4M x 32) Parallel 166MHz 5.5ns 90-TFBGA (8x13)
Win Source Part Number: 1065789-IS42VM32400G
Category: Integrated Circuits (ICs)>Memory
Package: Tray
Standard Package: 240
Mounting: SMD (SMT)
Technology: SDRAM - Mobile
Memory Type: Volatile
Memory Size: 128Mb (4M x 32)
Access Time: 5.5 ns
Voltage - Supply: 1.7V ~ 1.95V
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)
Temperature Range - Operating: -40°C ~ 85°C (TA)
Memory Format: DRAM
Clock Frequency: 166 MHz
Memory Interface: Parallel
Alternative Parts (Cross-Reference): IS42VM32400G-6BLIIS4
ECCN: EAR99
Fake Threat In the Open Market: 46 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0002
Mfr: ISSI, Integrated Silicon Solution Inc
IC DRAM 128MBIT PARALLEL 90TFBGA
SDRAM - Mobile Memory IC 128Mbit Parallel 166 MHz 5.5 ns 90-TFBGA (8x13)
IC DRAM 128MBIT PARALLEL 90TFBGA
| DigiKey | Win Source Electronics | Lingto Electronic Limited | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS42VM32400G-6BLI-ND | 1065789-IS42VM32400G-6BLI | IS42VM32400G-6BLI | IS42VM32400G-6BLI | IS42VM32400G-6BLI |
| Product Name | Memory | Integrated Circuits (ICs) - Memory | Memory | Memory | Integrated Circuits (ICs) - Memory |
| Memory Category | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |
| Density | 128000 kbits | 128000 kbits | 128000 kbits | 128000 kbits | |
| Package Type | 90-TFBGA | BGA; 90-TFBGA | BGA |
