Integrated Silicon Solution, Inc. Integrated Circuits (ICs) - Memory IS43DR16640B-25EBL-TR

Description
IC DRAM 1GBIT PARALLEL 84TWBGA
Datasheet
Description
IC DRAM 1GBIT PARALLEL 84TWBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - IS43DR16640B-25EBL-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS43DR16640B-25EBL-TR
Integrated Circuits (ICs) - Memory IS43DR16640B-25EBL-TR
IC DRAM 1GBIT PARALLEL 84TWBGA

IC DRAM 1GBIT PARALLEL 84TWBGA

Supplier's Site
SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 450 ps 84-TWBGA (8x12.5)

SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 450 ps 84-TWBGA (8x12.5)

Buy Now Datasheet
IC DRAM 1GBIT PARALLEL 84TWBGA

IC DRAM 1GBIT PARALLEL 84TWBGA

Supplier's Site Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS43DR16640B-25EBL-TR IS43DR16640B-25EBL-TR IS43DR16640B-25EBL-TR
Product Name Integrated Circuits (ICs) - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Data Rate 400 MHz
Access Time 0.4500 ns 0.4500 ns 0.4500 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Unlock Full Specs
to access all available technical data

Similar Products

 - 27S19ADM/B - Rochester Electronics
Rochester Electronics
Specs
Memory Category PROM
Density 0 kbits
Package Type DIP; CDIP16
View Details
4 suppliers
Memory - 589994-001-00 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Memory - SMJ418160 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 80 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details