Integrated Silicon Solution, Inc. Memory - SDRAM - IS43DR81280B-3DBL IS43DR81280B-3DBL

Description
Manufacturer: ISSI, Integrated Silicon Solution Inc Win Source Part Number: 814102-IS43DR81280B- 3DBL Packaging: Tray Mounting Style: SMD Technology: SDRAM - DDR2 Memory Type: Volatile Memory Size: 1Gb (128M x 8) Access Time: 450ps Supplier Device Package: 60-TWBGA (8x10.5) Temperature Range - Operating: 0°C ~ 70°C Memory Format: DRAM Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Manufacturer Package: 60-TFBGA Popularity: Low Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 242 MSL Level: 3 (168 Hours) Supply Voltage (V): 1.7V ~ 1.9V
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Description
Manufacturer: ISSI, Integrated Silicon Solution Inc Win Source Part Number: 814102-IS43DR81280B- 3DBL Packaging: Tray Mounting Style: SMD Technology: SDRAM - DDR2 Memory Type: Volatile Memory Size: 1Gb (128M x 8) Access Time: 450ps Supplier Device Package: 60-TWBGA (8x10.5) Temperature Range - Operating: 0°C ~ 70°C Memory Format: DRAM Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Manufacturer Package: 60-TFBGA Popularity: Low Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 242 MSL Level: 3 (168 Hours) Supply Voltage (V): 1.7V ~ 1.9V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - SDRAM - IS43DR81280B-3DBL - 814102-IS43DR81280B-3DBL - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - IS43DR81280B-3DBL
814102-IS43DR81280B-3DBL
Memory - SDRAM - IS43DR81280B-3DBL 814102-IS43DR81280B-3DBL
Manufacturer: ISSI, Integrated Silicon Solution Inc Win Source Part Number: 814102-IS43DR81280B- 3DBL Packaging: Tray Mounting Style: SMD Technology: SDRAM - DDR2 Memory Type: Volatile Memory Size: 1Gb (128M x 8) Access Time: 450ps Supplier Device Package: 60-TWBGA (8x10.5) Temperature Range - Operating: 0°C ~ 70°C Memory Format: DRAM Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Manufacturer Package: 60-TFBGA Popularity: Low Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 242 MSL Level: 3 (168 Hours) Supply Voltage (V): 1.7V ~ 1.9V

Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 814102-IS43DR81280B-3DBL
Packaging: Tray
Mounting Style: SMD
Technology: SDRAM - DDR2
Memory Type: Volatile
Memory Size: 1Gb (128M x 8)
Access Time: 450ps
Supplier Device Package: 60-TWBGA (8x10.5)
Temperature Range - Operating: 0°C ~ 70°C
Memory Format: DRAM
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Manufacturer Package: 60-TFBGA
Popularity: Low
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 242
MSL Level: 3 (168 Hours)
Supply Voltage (V): 1.7V ~ 1.9V

Buy Now
Memory - IS43DR81280B-3DBL-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR2 Memory IC 1Gb (128M x 8) Parallel 333MHz 450ps 60-TWBGA (8x10.5)

SDRAM - DDR2 Memory IC 1Gb (128M x 8) Parallel 333MHz 450ps 60-TWBGA (8x10.5)

Buy Now Datasheet
1G, 1.8V, Ddr2, 128Mx8, 333Mhz @cl5, 60 Ball Bga, (8Mm X 10.5Mm), Rohs Integrated Silicon Solution (Issi) - 18W6804 - Newark, An Avnet Company
Chicago, IL, United States
1G, 1.8V, Ddr2, 128Mx8, 333Mhz @cl5, 60 Ball Bga, (8Mm X 10.5Mm), Rohs Integrated Silicon Solution (Issi)
18W6804
1G, 1.8V, Ddr2, 128Mx8, 333Mhz @cl5, 60 Ball Bga, (8Mm X 10.5Mm), Rohs Integrated Silicon Solution (Issi) 18W6804
1G, 1.8V, DDR2, 128Mx8, 333Mhz @CL5, 60 ball BGA, (8Mm x 10.5mm), RoHS

1G, 1.8V, DDR2, 128Mx8, 333Mhz @CL5, 60 ball BGA, (8Mm x 10.5mm), RoHS

Supplier's Site
Memory - IS43DR81280B-3DBL - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 1Gbit Parallel 333 MHz 450 ps 60-TWBGA (8x10.5)

SDRAM - DDR2 Memory IC 1Gbit Parallel 333 MHz 450 ps 60-TWBGA (8x10.5)

Buy Now Datasheet
IC DRAM 1GBIT PARALLEL 60TWBGA

IC DRAM 1GBIT PARALLEL 60TWBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - IS43DR81280B-3DBL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS43DR81280B-3DBL
Integrated Circuits (ICs) - Memory IS43DR81280B-3DBL
IC DRAM 1GBIT PARALLEL 60TWBGA

IC DRAM 1GBIT PARALLEL 60TWBGA

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Newark, An Avnet Company Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 814102-IS43DR81280B-3DBL IS43DR81280B-3DBL-ND 18W6804 IS43DR81280B-3DBL IS43DR81280B-3DBL IS43DR81280B-3DBL
Product Name Memory - SDRAM - IS43DR81280B-3DBL Memory 1G, 1.8V, Ddr2, 128Mx8, 333Mhz @cl5, 60 Ball Bga, (8Mm X 10.5Mm), Rohs Integrated Silicon Solution (Issi) Memory Memory Integrated Circuits (ICs) - Memory
Memory Category Volatile; DRAM Chip DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 0.4500 ns 0.4500 ns 0.4500 ns 0.4500 ns
Cycle Time 15 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
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