Integrated Silicon Solution, Inc. Memory IS42VM32200M-6BLI-TR

Description
SDRAM - Mobile Memory IC 64Mb (2M x 32) Parallel 166MHz 5.5ns 90-TFBGA (8x13)
Request a Quote Datasheet
Description
SDRAM - Mobile Memory IC 64Mb (2M x 32) Parallel 166MHz 5.5ns 90-TFBGA (8x13)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS42VM32200M-6BLI-TR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile Memory IC 64Mb (2M x 32) Parallel 166MHz 5.5ns 90-TFBGA (8x13)

SDRAM - Mobile Memory IC 64Mb (2M x 32) Parallel 166MHz 5.5ns 90-TFBGA (8x13)

Buy Now Datasheet
IC DRAM 64MBIT PARALLEL 90TFBGA

IC DRAM 64MBIT PARALLEL 90TFBGA

Supplier's Site Datasheet
Memory - IS42VM32200M-6BLI-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile Memory IC 64Mbit Parallel 166 MHz 5.5 ns 90-TFBGA (8x13)

SDRAM - Mobile Memory IC 64Mbit Parallel 166 MHz 5.5 ns 90-TFBGA (8x13)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS42VM32200M-6BLI-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS42VM32200M-6BLI-TR
Integrated Circuits (ICs) - Memory IS42VM32200M-6BLI-TR
IC DRAM 64MBIT PARALLEL 90TFBGA

IC DRAM 64MBIT PARALLEL 90TFBGA

Supplier's Site

Technical Specifications

  DigiKey Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS42VM32200M-6BLI-TR-ND IS42VM32200M-6BLI-TR IS42VM32200M-6BLI-TR IS42VM32200M-6BLI-TR
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 64000 kbits 64000 kbits 64000 kbits 64000 kbits
Package Type 90-TFBGA BGA; 90-TFBGA BGA
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