Integrated Silicon Solution, Inc. Memory IS43DR86400C-25DBL

Description
SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 400MHz 400ps 60-TWBGA (8x10.5)
Request a Quote Datasheet
Description
SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 400MHz 400ps 60-TWBGA (8x10.5)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS43DR86400C-25DBL-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 400MHz 400ps 60-TWBGA (8x10.5)

SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 400MHz 400ps 60-TWBGA (8x10.5)

Buy Now Datasheet
Memory - SDRAM - IS43DR86400C-25DBL - 814177-IS43DR86400C-25DBL - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - IS43DR86400C-25DBL
814177-IS43DR86400C-25DBL
Memory - SDRAM - IS43DR86400C-25DBL 814177-IS43DR86400C-25DBL
Manufacturer: ISSI, Integrated Silicon Solution Inc Win Source Part Number: 814177-IS43DR86400C- 25DBL Packaging: Tray Mounting Style: SMD Technology: SDRAM - DDR2 Memory Type: Volatile Memory Size: 512Mb (64M x 8) Access Time: 400ps Supplier Device Package: 60-TWBGA (8x10.5) Temperature Range - Operating: 0°C ~ 70°C Memory Format: DRAM Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Manufacturer Package: 60-TFBGA Popularity: Low Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 242 MSL Level: 3 (168 Hours) Supply Voltage (V): 1.7V ~ 1.9V

Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 814177-IS43DR86400C-25DBL
Packaging: Tray
Mounting Style: SMD
Technology: SDRAM - DDR2
Memory Type: Volatile
Memory Size: 512Mb (64M x 8)
Access Time: 400ps
Supplier Device Package: 60-TWBGA (8x10.5)
Temperature Range - Operating: 0°C ~ 70°C
Memory Format: DRAM
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Manufacturer Package: 60-TFBGA
Popularity: Low
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 242
MSL Level: 3 (168 Hours)
Supply Voltage (V): 1.7V ~ 1.9V

Buy Now
Memory IC and Storage Component - 774-IS43DR86400C-25DBL - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-IS43DR86400C-25DBL
Memory IC and Storage Component 774-IS43DR86400C-25DBL
IC DRAM 512MBIT PAR 60TWBGA Product overview: IS43DR86400C-25DBL from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43DR86400C-25D BL can be used for catalog matching and distributor lookup.

IC DRAM 512MBIT PAR 60TWBGA Product overview: IS43DR86400C-25DBL from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43DR86400C-25DBL can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - IS43DR86400C-25DBL - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 512Mbit Parallel 400 MHz 400 ps 60-TWBGA (8x10.5)

SDRAM - DDR2 Memory IC 512Mbit Parallel 400 MHz 400 ps 60-TWBGA (8x10.5)

Buy Now Datasheet
IC DRAM 512MBIT PARALLEL 60TWBGA

IC DRAM 512MBIT PARALLEL 60TWBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - IS43DR86400C-25DBL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS43DR86400C-25DBL
Integrated Circuits (ICs) - Memory IS43DR86400C-25DBL
IC DRAM 512MBIT PARALLEL 60TWBGA

IC DRAM 512MBIT PARALLEL 60TWBGA

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS43DR86400C-25DBL-ND 814177-IS43DR86400C-25DBL 774-IS43DR86400C-25DBL IS43DR86400C-25DBL IS43DR86400C-25DBL IS43DR86400C-25DBL
Product Name Memory Memory - SDRAM - IS43DR86400C-25DBL Memory IC and Storage Component Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM Chip Volatile; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 512000 kbits 512000 kbits 512000 kbits 512000 kbits
Package Type 60-TFBGA BGA; Tray BGA; 60-TFBGA BGA
Supply Voltage 1.7V ~ 1.9V 1.7V ~ 1.9V 1.7V ~ 1.9V 1.7V ~ 1.9V 1.7V ~ 1.9V
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 5962-9459901MYA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category NVSRAM; SRAM Chip
Access Time 55 ns
Density 64 kbits
View Details
Memory - AS5SP512K36 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SSRAM; SRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 4096 kbits
View Details
 - 9423DC - Rochester Electronics
Texas Instruments
Specs
Memory Category FIFO
Logic Family TTL
Package Type DIP; CDIP24
View Details
3 suppliers
Memory - 520966231076 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers