Integrated Silicon Solution, Inc. Memory IS42VM16800H-6BLI-TR

Description
SDRAM - Mobile Memory IC 128Mb (8M x 16) Parallel 166MHz 5.5ns 54-TFBGA (8x8)
Request a Quote Datasheet
Description
SDRAM - Mobile Memory IC 128Mb (8M x 16) Parallel 166MHz 5.5ns 54-TFBGA (8x8)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS42VM16800H-6BLI-TR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile Memory IC 128Mb (8M x 16) Parallel 166MHz 5.5ns 54-TFBGA (8x8)

SDRAM - Mobile Memory IC 128Mb (8M x 16) Parallel 166MHz 5.5ns 54-TFBGA (8x8)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS42VM16800H-6BLI-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS42VM16800H-6BLI-TR
Integrated Circuits (ICs) - Memory IS42VM16800H-6BLI-TR
IC DRAM 128MBIT PARALLEL 54TFBGA

IC DRAM 128MBIT PARALLEL 54TFBGA

Supplier's Site
IC DRAM 128MBIT PARALLEL 54TFBGA

IC DRAM 128MBIT PARALLEL 54TFBGA

Supplier's Site Datasheet
Memory - IS42VM16800H-6BLI-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile Memory IC 128Mbit Parallel 166 MHz 5.5 ns 54-TFBGA (8x8)

SDRAM - Mobile Memory IC 128Mbit Parallel 166 MHz 5.5 ns 54-TFBGA (8x8)

Buy Now Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS42VM16800H-6BLI-TR-ND IS42VM16800H-6BLI-TR IS42VM16800H-6BLI-TR IS42VM16800H-6BLI-TR
Product Name Memory Integrated Circuits (ICs) - Memory Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 128000 kbits 128000 kbits 128000 kbits 128000 kbits
Package Type 54-TFBGA BGA BGA; 54-TFBGA
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882785 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details
 - 27S181PC - Rochester Electronics
Specs
Memory Category PROM
Package Type DIP; PDIP24
View Details
4 suppliers
 - NMC2147HF-3-MIL - Rochester Electronics
Texas Instruments
Specs
Memory Category SRAM Chip
Package Type FL18
View Details
3 suppliers
Memory - AS28C010 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 120 to 250 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details