Integrated Silicon Solution, Inc. Memory IS42VM16800E-75BLI

Description
SDRAM - Mobile Memory IC 128Mb (8M x 16) Parallel 133MHz 5.4ns 54-TFBGA (8x8)
Request a Quote Datasheet
Description
SDRAM - Mobile Memory IC 128Mb (8M x 16) Parallel 133MHz 5.4ns 54-TFBGA (8x8)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS42VM16800E-75BLI-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile Memory IC 128Mb (8M x 16) Parallel 133MHz 5.4ns 54-TFBGA (8x8)

SDRAM - Mobile Memory IC 128Mb (8M x 16) Parallel 133MHz 5.4ns 54-TFBGA (8x8)

Buy Now Datasheet
IC DRAM 128MBIT PARALLEL 54TFBGA

IC DRAM 128MBIT PARALLEL 54TFBGA

Supplier's Site Datasheet
Memory - IS42VM16800E-75BLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile Memory IC 128Mbit Parallel 133 MHz 5.4 ns 54-TFBGA (8x8)

SDRAM - Mobile Memory IC 128Mbit Parallel 133 MHz 5.4 ns 54-TFBGA (8x8)

Buy Now
Integrated Circuits (ICs) - Memory - IS42VM16800E-75BLI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS42VM16800E-75BLI
Integrated Circuits (ICs) - Memory IS42VM16800E-75BLI
IC DRAM 128MBIT PARALLEL 54TFBGA

IC DRAM 128MBIT PARALLEL 54TFBGA

Supplier's Site

Technical Specifications

  DigiKey Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS42VM16800E-75BLI-ND IS42VM16800E-75BLI IS42VM16800E-75BLI IS42VM16800E-75BLI
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 128000 kbits 128000 kbits 128000 kbits 128000 kbits
Package Type 54-TFBGA BGA; 54-TFBGA BGA
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