Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 753781-IS43DR16640B-
Packaging: Tray
Mounting Style: SMD
Technology: SDRAM - DDR2
Memory Type: Volatile
Memory Size: 1Gb (64M x 16)
Access Time: 450ps
Categories: Integrated Circuits
Supplier Device Package: 84-TWBGA (8x12.5)
Temperature Range - Operating: 0°C ~ 70°C
Memory Format: DRAM
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Manufacturer Package: 84-TFBGA
Popularity: Low
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 209
MSL Level: 3 (168 Hours)
Supply Voltage (V): 1.7V ~ 1.9V
IC DRAM 1GBIT PARALLEL 84TWBGA Product overview: IS43DR16640B-3DBL from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43DR16640B-3DB
SDRAM - DDR2 Memory IC 1Gb (64M x 16) Parallel 333MHz 450ps 84-TWBGA (8x12.5)
1G, 1.8V, DDR2, 64Mx16, 333Mhz @ CL5, 84 ball BGA (8Mm x 12.5mm) RoHS
IC DRAM 1G PARALLEL 84TWBGA
SDRAM - DDR2 Memory IC 1Gbit Parallel 333 MHz 450 ps 84-TWBGA (8x12.5)
IC DRAM 1G PARALLEL 84TWBGA
IC DRAM 1G PARALLEL 84TWBGA
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | ODG (Origin Data Global) | Quarktwin Technology Ltd. | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 753781-IS43DR16640B-3DBL | 774-IS43DR16640B-3DBL | 706-1202-ND | 18W6792 | IS43DR16640B-3DBL | IS43DR16640B-3DBL | IS43DR16640B-3DBL | IS43DR16640B-3DBL |
| Product Name | Memory - SDRAM - IS43DR16640B-3DBL | Memory IC and Storage Component | Memory | 1G, 1.8V, Ddr2, 64Mx16, 333Mhz @ Cl5, 84 Ball Bga (8Mm X 12.5Mm) Rohs Integrated Silicon Solution (Issi) | Memory | Memory | Memory | Integrated Circuits (ICs) - Memory |
| Memory Category | Volatile; DRAM Chip | DRAM Chip | DRAM Chip | SDRAM - DDR2; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | |
| Access Time | 0.4500 ns | 0.4500 ns | 0.4500 ns | 0.4500 ns | 0.4500 ns | 0.4500 ns | ||
| Cycle Time | 15 ns | |||||||
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 C (32 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | ||
| Supply Voltage | 1.7V ~ 1.9V | 1.7 | 1.7V ~ 1.9V | 1.7V ~ 1.9V | 1.7V ~ 1.9V | 1.7V ~ 1.9V |
