Integrated Silicon Solution, Inc. Memory IS42SM32100D-6BLI-TR

Description
SDRAM - Mobile Memory IC 32Mbit Parallel 166 MHz 5.5 ns 54-TFBGA (8x8)
Datasheet
Description
SDRAM - Mobile Memory IC 32Mbit Parallel 166 MHz 5.5 ns 54-TFBGA (8x8)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS42SM32100D-6BLI-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile Memory IC 32Mbit Parallel 166 MHz 5.5 ns 54-TFBGA (8x8)

SDRAM - Mobile Memory IC 32Mbit Parallel 166 MHz 5.5 ns 54-TFBGA (8x8)

Buy Now Datasheet
IC DRAM 32MBIT PARALLEL 54TFBGA

IC DRAM 32MBIT PARALLEL 54TFBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - IS42SM32100D-6BLI-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS42SM32100D-6BLI-TR
Integrated Circuits (ICs) - Memory IS42SM32100D-6BLI-TR
IC DRAM 32MBIT PARALLEL 54TFBGA

IC DRAM 32MBIT PARALLEL 54TFBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS42SM32100D-6BLI-TR IS42SM32100D-6BLI-TR IS42SM32100D-6BLI-TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 5.5 ns 5.5 ns 5.5 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 32000 kbits 32000 kbits 32000 kbits
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