Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 738845-IS43DR16128C-
Packaging: Tray
Mounting Style: SMD
Technology: SDRAM - DDR2
Memory Type: Volatile
Memory Size: 2Gb (128M x 16)
Access Time: 400ns
Categories: Integrated Circuits
Supplier Device Package: 84-TWBGA (8x12.5)
Temperature Range - Operating: -40°C ~ 85°C
Memory Format: DRAM
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Manufacturer Package: 84-TFBGA
Alternative Parts (Cross-Reference): MT47H128M16RT-25EIT:
Popularity: Low
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 209
MSL Level: 3 (168 Hours)
Supply Voltage (V): 1.7V ~ 1.9V
SDRAM - DDR2 Memory IC 2Gb (128M x 16) Parallel 400MHz 400ns 84-TWBGA (8x12.5)
IC DRAM 2GBIT PARALLEL 84TWBGA
DRAM, 128M X 16BIT, WBGA-84; DRAM Type:DDR2; DRAM Density:2Gbit; DRAM Memory Configuration:128M x 16bit; Clock Frequency:400MHz; Memory Case Style:WBGA; No. of Pins:84Pins; Supply Voltage Nom:1.8V; Access Time:-; MSL:- RoHS Compliant: Yes
IC DRAM 2GBIT PARALLEL 84TWBGA
IC DRAM 2GBIT PARALLEL 84TWBGA
SDRAM - DDR2 Memory IC 2Gbit Parallel 400 MHz 400 ns 84-TWBGA (8x12.5)
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 738845-IS43DR16128C-25DBLI | 706-1568-ND | IS43DR16128C-25DBLI | 81Y1239 | IS43DR16128C-25DBLI | IS43DR16128C-25DBLI | IS43DR16128C-25DBLI |
| Product Name | Memory - SDRAM - IS43DR16128C-25DBLI | Memory | Memory | Dram, 128M X 16Bit, Wbga-84; Dram Type Integrated Silicon Solution (Issi) | Integrated Circuits (ICs) - Memory | Memory | Memory |
| Memory Category | Volatile; DRAM Chip | DRAM Chip | SDRAM - DDR2; DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 400 ns | 0.4000 ns | 400 ns | 400 ns | 400 ns | ||
| Cycle Time | 15 ns | ||||||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Supply Voltage | 1.7V ~ 1.9V | 1.7V ~ 1.9V | 1.7V ~ 1.9V | 1.7V ~ 1.9V | 1.7V ~ 1.9V |
