Integrated Silicon Solution, Inc. Memory IS43DR82560C-3DBLI

Description
SDRAM - DDR2 Memory IC 2Gb (256M x 8) Parallel 333MHz 450ps 60-TWBGA (8x10.5)
Request a Quote Datasheet
Description
SDRAM - DDR2 Memory IC 2Gb (256M x 8) Parallel 333MHz 450ps 60-TWBGA (8x10.5)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 706-1573-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR2 Memory IC 2Gb (256M x 8) Parallel 333MHz 450ps 60-TWBGA (8x10.5)

SDRAM - DDR2 Memory IC 2Gb (256M x 8) Parallel 333MHz 450ps 60-TWBGA (8x10.5)

Buy Now Datasheet
Memory IC and Storage Component - 774-IS43DR82560C-3DBLI - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-IS43DR82560C-3DBLI
Memory IC and Storage Component 774-IS43DR82560C-3DBLI
IC DRAM 2GBIT PARALLEL 60TWBGA Product overview: IS43DR82560C-3DBLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43DR82560C-3DB LI can be used for catalog matching and distributor lookup.

IC DRAM 2GBIT PARALLEL 60TWBGA Product overview: IS43DR82560C-3DBLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43DR82560C-3DBLI can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - 973695-IS43DR82560C-3DBLI - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory
973695-IS43DR82560C-3DBLI
Integrated Circuits (ICs) - Memory 973695-IS43DR82560C-3DBLI
Win Source Part Number: 973695-IS43DR82560C- 3DBLI Category: Integrated Circuits (ICs)>Memory Package: Tray Standard Package: 242 Mounting: SMD (SMT) Technology: SDRAM - DDR2 Memory Type: Volatile Memory Size: 2Gb (256M x 8) Access Time: 450 ps Voltage - Supply: 1.7V ~ 1.9V Package / Case: 60-TFBGA Supplier Device Package: 60-TWBGA (8x10.5) Temperature Range - Operating: -40°C ~ 85°C (TA) Memory Format: DRAM Clock Frequency: 333 MHz Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel ECCN: EAR99 Fake Threat In the Open Market: 85 pct. MSL Level: 3 (168 Hours) REACH Status: REACH Unaffected HTSUS: 8542.32.0036 Mfr: ISSI, Integrated Silicon Solution Inc Other Names: 706-1573 Base Product Number: IS43DR82560

Win Source Part Number: 973695-IS43DR82560C-3DBLI
Category: Integrated Circuits (ICs)>Memory
Package: Tray
Standard Package: 242
Mounting: SMD (SMT)
Technology: SDRAM - DDR2
Memory Type: Volatile
Memory Size: 2Gb (256M x 8)
Access Time: 450 ps
Voltage - Supply: 1.7V ~ 1.9V
Package / Case: 60-TFBGA
Supplier Device Package: 60-TWBGA (8x10.5)
Temperature Range - Operating: -40°C ~ 85°C (TA)
Memory Format: DRAM
Clock Frequency: 333 MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
ECCN: EAR99
Fake Threat In the Open Market: 85 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0036
Mfr: ISSI, Integrated Silicon Solution Inc
Other Names: 706-1573
Base Product Number: IS43DR82560

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS43DR82560C-3DBLI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS43DR82560C-3DBLI
Integrated Circuits (ICs) - Memory IS43DR82560C-3DBLI
IC DRAM 2GBIT PARALLEL 60TWBGA

IC DRAM 2GBIT PARALLEL 60TWBGA

Supplier's Site
IC DRAM 2GBIT PARALLEL 60TWBGA

IC DRAM 2GBIT PARALLEL 60TWBGA

Supplier's Site Datasheet
Memory - IS43DR82560C-3DBLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 2Gbit Parallel 333 MHz 450 ps 60-TWBGA (8x10.5)

SDRAM - DDR2 Memory IC 2Gbit Parallel 333 MHz 450 ps 60-TWBGA (8x10.5)

Buy Now Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 706-1573-ND 774-IS43DR82560C-3DBLI 973695-IS43DR82560C-3DBLI IS43DR82560C-3DBLI IS43DR82560C-3DBLI IS43DR82560C-3DBLI
Product Name Memory Memory IC and Storage Component Integrated Circuits (ICs) - Memory Integrated Circuits (ICs) - Memory Memory Memory
Memory Category DRAM Chip DRAM Chip Volatile; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 C (-40 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Package Type 60-TFBGA BGA BGA; 60-TFBGA
Supply Voltage 1.7V ~ 1.9V 1.7 1.7V ~ 1.9V 1.7V ~ 1.9V 1.7V ~ 1.9V
Access Time 0.4500 ns 0.4500 ns 0.4500 ns 0.4500 ns 0.4500 ns
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