Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 803464-IS43DR16640C-
Packaging: Tray
Mounting Style: SMD
Technology: SDRAM - DDR2
Memory Type: Volatile
Memory Size: 1Gb (64M x 16)
Access Time: 400ps
Supplier Device Package: 84-TWBGA (8x12.5)
Temperature Range - Operating: -40°C ~ 85°C
Memory Format: DRAM
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Manufacturer Package: 84-TFBGA
Popularity: Medium
Fake Threat In the Open Market: 80 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 209
MSL Level: 3 (168 Hours)
Supply Voltage (V): 1.7V ~ 1.9V
SDRAM - DDR2 Memory IC 1Gb (64M x 16) Parallel 400MHz 400ps 84-TWBGA (8x12.5)
IC DRAM 1GBIT PARALLEL 84TWBGA
IC DRAM 1GBIT PARALLEL 84TWBGA
IC DRAM 1GBIT PARALLEL 84TWBGA
IC DRAM 1G PARALLEL 84TWBGA
SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 400 ps 84-TWBGA (8x12.5)
DRAM, 64M X 16BIT, WBGA-84; DRAM Memory Configuration:64M x 16bit; Memory Case Style:WBGA; No. of Pins:84Pins; Access Time:-; Operating Temperature Min:-40°C; Operating Temperature Max:85°C; Product Range:-; MSL:- RoHS Compliant: Yes
| Win Source Electronics | DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Utmel Electronic Limited | Quarktwin Technology Ltd. | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 803464-IS43DR16640C-25DBLI | 706-1564-ND | IS43DR16640C-25DBLI | IS43DR16640C-25DBLI | IS43DR16640C-25DBLI | 413-IS43DR16640C-25DBLI | IS43DR16640C-25DBLI | 81Y1255 |
| Product Name | Memory - SDRAM - IS43DR16640C-25DBLI | Memory | Memory | Integrated Circuits (ICs) - Memory | Memory | IC DRAM 1G PARALLEL 84TWBGA | Memory | Dram, 64M X 16Bit, Wbga-84; Dram Memory Configuration Integrated Silicon Solution (Issi) |
| Memory Category | Volatile; DRAM Chip | DRAM Chip | SDRAM - DDR2; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM Chip |
| Access Time | 0.4000 ns | 0.4000 ns | 0.4000 ns | 0.4000 ns | 0.4000 ns | 0.4000 ns | ||
| Cycle Time | 15 ns | 15 ns | ||||||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |
| Supply Voltage | 1.7V ~ 1.9V | 1.7V ~ 1.9V | 1.7V ~ 1.9V | 1.7V ~ 1.9V | 1.8V | 1.7V ~ 1.9V |
