Integrated Silicon Solution, Inc. Memory IC and Storage Component IS42VM32160E-75BLI

Description
IC DRAM 512MBIT PAR 90TFBGA Product overview: IS42VM32160E-75BLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS42VM32160E-75B LI can be used for catalog matching and distributor lookup.
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Description
IC DRAM 512MBIT PAR 90TFBGA Product overview: IS42VM32160E-75BLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS42VM32160E-75B LI can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Memory IC and Storage Component - 774-IS42VM32160E-75BLI - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-IS42VM32160E-75BLI
Memory IC and Storage Component 774-IS42VM32160E-75BLI
IC DRAM 512MBIT PAR 90TFBGA Product overview: IS42VM32160E-75BLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS42VM32160E-75B LI can be used for catalog matching and distributor lookup.

IC DRAM 512MBIT PAR 90TFBGA Product overview: IS42VM32160E-75BLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS42VM32160E-75BLI can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - IS42VM32160E-75BLI-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile Memory IC 512Mb (16M x 32) Parallel 133MHz 6ns 90-TFBGA (8x13)

SDRAM - Mobile Memory IC 512Mb (16M x 32) Parallel 133MHz 6ns 90-TFBGA (8x13)

Buy Now Datasheet
IC DRAM 512MBIT PARALLEL 90TFBGA

IC DRAM 512MBIT PARALLEL 90TFBGA

Supplier's Site Datasheet
Memory - IS42VM32160E-75BLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile Memory IC 512Mbit Parallel 133 MHz 6 ns 90-TFBGA (8x13)

SDRAM - Mobile Memory IC 512Mbit Parallel 133 MHz 6 ns 90-TFBGA (8x13)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS42VM32160E-75BLI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS42VM32160E-75BLI
Integrated Circuits (ICs) - Memory IS42VM32160E-75BLI
IC DRAM 512MBIT PARALLEL 90TFBGA

IC DRAM 512MBIT PARALLEL 90TFBGA

Supplier's Site
512M, 1.8V, Mobile Sdram, 16Mx32, 133Mhz, 90 Ball Bga (8Mm X 13Mm) Rohs Integrated Silicon Solution (Issi) - 29X5187 - Newark, An Avnet Company
Chicago, IL, United States
512M, 1.8V, Mobile Sdram, 16Mx32, 133Mhz, 90 Ball Bga (8Mm X 13Mm) Rohs Integrated Silicon Solution (Issi)
29X5187
512M, 1.8V, Mobile Sdram, 16Mx32, 133Mhz, 90 Ball Bga (8Mm X 13Mm) Rohs Integrated Silicon Solution (Issi) 29X5187
512M, 1.8V, Mobile SDRAM, 16Mx32, 133Mhz, 90 ball BGA (8Mm x 13mm) RoHS

512M, 1.8V, Mobile SDRAM, 16Mx32, 133Mhz, 90 ball BGA (8Mm x 13mm) RoHS

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. DigiKey Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 774-IS42VM32160E-75BLI IS42VM32160E-75BLI-ND IS42VM32160E-75BLI IS42VM32160E-75BLI IS42VM32160E-75BLI 29X5187
Product Name Memory IC and Storage Component Memory Memory Memory Integrated Circuits (ICs) - Memory 512M, 1.8V, Mobile Sdram, 16Mx32, 133Mhz, 90 Ball Bga (8Mm X 13Mm) Rohs Integrated Silicon Solution (Issi)
Memory Category DRAM Chip DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM Chip
Access Time 6 ns 6 ns 6 ns 6 ns
Operating Temperature -40 C (-40 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits 512000 kbits 512000 kbits
Number of Words 4000 k
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