The IS43DR82560B-25EBL-TR is a 2Gb DDR2 SDRAM memory chip featuring a double data rate architecture that allows for high-speed operation with a 4n-prefetch design. It operates at a voltage of 1.8V ¬±0.1V and is compatible with JEDEC standard 1.8V I/O (SSTL_18). The device supports programmable CAS latency options of 3, 4, 5, 6, and 7, along with adjustable burst lengths of 4 or 8. It includes eight internal banks for concurrent operations and features on-die termination (ODT) for improved signal integrity. The memory chip is available in a 60-ball BGA package measuring 10.5mm x 13mm and is suitable for commercial, industrial, and automotive applications, with temperature ranges from -40¬8C to 105¬8C for automotive grades. Key timing parameters include a cycle time of 2.5ns at CL=6 for DDR2-800E and 3.0ns at CL=5 for DDR2-667D. This product is designed for applications requiring reliable and efficient memory performance.
SDRAM - DDR2 Memory IC 2Gbit Parallel 400 MHz 400 ps 60-TWBGA (10.5x13)
IC DRAM 2GBIT PARALLEL 60TWBGA
IC DRAM 2GBIT PARALLEL 60TWBGA
| Quarktwin Technology Ltd. | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS43DR82560B-25EBL-TR | IS43DR82560B-25EBL-TR | IS43DR82560B-25EBL-TR |
| Product Name | Memory | Memory | Integrated Circuits (ICs) - Memory |
| Memory Category | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip |
| Access Time | 0.4000 ns | 0.4000 ns | 0.4000 ns |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |
| Density | 2000000 kbits | 2000000 kbits | 2000000 kbits |
