Integrated Silicon Solution, Inc. Memory IS43DR82560B-25EBL-TR

The IS43DR82560B-25EBL-TR is a 2Gb DDR2 SDRAM memory chip featuring a double data rate architecture that allows for high-speed operation with a 4n-prefetch design. It operates at a voltage of 1.8V ±0.1V and is compatible with JEDEC standard 1.8V I/O (SSTL_18). The device supports programmable CAS latency options of 3, 4, 5, 6, and 7, along with adjustable burst lengths of 4 or 8. It includes eight internal banks for concurrent operations and features on-die termination (ODT) for improved signal integrity. The memory chip is available in a 60-ball BGA package measuring 10.5mm x 13mm and is suitable for commercial, industrial, and automotive applications, with temperature ranges from -40°C to 105°C for automotive grades. Key timing parameters include a cycle time of 2.5ns at CL=6 for DDR2-800E and 3.0ns at CL=5 for DDR2-667D. This product is designed for applications requiring reliable and efficient memory performance.