IC DRAM 512MBIT PAR 54TFBGA Product overview: IS42SM16320E-6BLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS42SM16320E-6BL
SDRAM - Mobile Memory IC 512Mb (32M x 16) Parallel 166MHz 5.5ns 54-TFBGA (8x8)
IC DRAM 512MBIT PARALLEL 54TFBGA
SDRAM - Mobile Memory IC 512Mbit Parallel 166 MHz 5.5 ns 54-TFBGA (8x8)
IC DRAM 512MBIT PARALLEL 54TFBGA
| ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-IS42SM16320E-6BLI | IS42SM16320E-6BLI-ND | IS42SM16320E-6BLI | IS42SM16320E-6BLI | IS42SM16320E-6BLI |
| Product Name | Memory IC and Storage Component | Memory | Integrated Circuits (ICs) - Memory | Memory | Memory |
| Memory Category | DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 8 ns | 5.5 ns | 5.5 ns | 5.5 ns | |
| Operating Temperature | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |
| Density | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits |
| Number of Words | 8000 k |
