SDRAM - DDR2 Memory IC 512Mb (64M x 8) Parallel 333MHz 450ps 60-TWBGA (8x10.5)
Win Source Part Number: 1020208-IS43DR86400D
Category: Integrated Circuits (ICs)>Memory
Package: Tray
Standard Package: 242
Mounting: SMD (SMT)
Technology: SDRAM - DDR2
Memory Type: Volatile
Memory Size: 512Mb (64M x 8)
Access Time: 450 ps
Voltage - Supply: 1.7V ~ 1.9V
Package / Case: 60-TFBGA
Supplier Device Package: 60-TWBGA (8x10.5)
Temperature Range - Operating: -40°C ~ 85°C (TA)
Memory Format: DRAM
Clock Frequency: 333 MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
ECCN: EAR99
Fake Threat In the Open Market: 60 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0028
Mfr: ISSI, Integrated Silicon Solution Inc
Base Product Number: IS43DR86400
Product Status: Not For New Designs
IC DRAM 512MBIT PAR 60TWBGA Product overview: IS43DR86400D-3DBLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43DR86400D-3DB
IC DRAM 512MBIT PARALLEL 60TWBGA
IC DRAM 512MBIT PARALLEL 60TWBGA
SDRAM - DDR2 Memory IC 512Mbit Parallel 333 MHz 450 ps 60-TWBGA (8x10.5)
IC DRAM 512MBIT PARALLEL 60TWBGA
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS43DR86400D-3DBLI-ND | 1020208-IS43DR86400D-3DBLI | 774-IS43DR86400D-3DBLI | IS43DR86400D-3DBLI | IS43DR86400D-3DBLI | IS43DR86400D-3DBLI | IS43DR86400D-3DBLI |
| Product Name | Memory | Integrated Circuits (ICs) - Memory | Memory IC and Storage Component | Memory | Integrated Circuits (ICs) - Memory | Memory | Memory |
| Memory Category | DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | SDRAM - DDR2; DRAM Chip |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |
| Density | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | |
| Package Type | 60-TFBGA | BGA | BGA; 60-TFBGA | 60-TFBGA | |||
| Supply Voltage | 1.7V ~ 1.9V | 1.7V ~ 1.9V | 1.7 | 1.7V ~ 1.9V | 1.7V ~ 1.9V | 1.7V ~ 1.9V |
