IC DRAM 256MBIT PARALLEL 90TFBGA
IC DRAM 256MBIT PAR 90TFBGA Product overview: IS42S32800J-7BLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS42S32800J-7BLI
SDRAM Memory IC 256Mb (8M x 32) Parallel 143MHz 5.4ns 90-TFBGA (8x13)
Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 851989-IS42S32800J-7
Features: Memory IC 143 MHz 5.4 ns
Package: Tray
Family Name: IS42S32800
Categories: Integrated Circuits (ICs)
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited
Quantity per package: 240
MSL Level: 3 (168 Hours)
Estimated Pruduction Lead Time: 19 Weeks
REACH Status: REACH Unaffected
HTSUS: 8542.32.0024
Other Part Number: 706-1366, IS42S32800J-7BLI-ND
IC DRAM 256MBIT PAR 90TFBGA
SDRAM Memory IC 256Mbit Parallel 143 MHz 5.4 ns 90-TFBGA (8x13)
IC DRAM 256MBIT PARALLEL 90TFBGA
IC DRAM 256M PARALLEL 90TFBGA
DRAM, 256MBIT, 143MHZ, TFBGA-90; DRAM Memory Configuration:8M x 32bit; Memory Case Style:TFBGA; No. of Pins:90Pins; IC Interface Type:LVTTL; Access Time:5.4ns; Page Size:-; Operating Temperature Min:-40°C; Operating Temperature RoHS Compliant: Yes
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Lingto Electronic Limited | Utmel Electronic Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS42S32800J-7BLI | 774-IS42S32800J-7BLI | 706-1366-ND | 851989-IS42S32800J-7BLI | IS42S32800J-7BLI | IS42S32800J-7BLI | IS42S32800J-7BLI | 413-IS42S32800J-7BLI | 50AC5245 |
| Product Name | Memory | Memory IC and Storage Component | Memory | Memory - SDRAM - IS42S32800J-7BLI | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory | IC DRAM 256M PARALLEL 90TFBGA | Dram, 256Mbit, 143Mhz, Tfbga-90; Dram Memory Configuration Integrated Silicon Solution (Issi) |
| Memory Category | SDRAM; DRAM Chip | DRAM Chip | DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM Chip |
| Data Rate | 143 MHz | 143 MHz | |||||||
| Access Time | 5.4 ns | 6.5 ns | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | |||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 C (-40 F) | |||
| Density | 256000 kbits | 256000 kbits | 256000 kbits | 256000 kbits | 256000 kbits | 256000 kbits | 268435 kbits |
