IC DRAM 1GBIT PARALLEL 84TWBGA Product overview: IS43DR16640A-3DBI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43DR16640A-3DB
SDRAM - DDR2 Memory IC 1Gbit Parallel 333 MHz 450 ps 84-TWBGA (8x13.65)
IC DRAM 1GBIT PARALLEL 84TWBGA
IC DRAM 1GBIT PARALLEL 84TWBGA
| ERSAELECTRONICS PTE. LTD. | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-IS43DR16640A-3DBI | IS43DR16640A-3DBI | IS43DR16640A-3DBI | IS43DR16640A-3DBI |
| Product Name | Memory IC and Storage Component | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | Volatile; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 0.4500 ns | 0.4500 ns | 0.4500 ns | |
| Cycle Time | 15 ns | 15 ns | ||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) |
