Integrated Silicon Solution, Inc. Memory IS43DR16320E-3DBLI-TR

Description
SDRAM - DDR2 Memory IC 512Mb (32M x 16) Parallel 333MHz 450ns 84-TWBGA (8x12.5)
Request a Quote Datasheet
Description
SDRAM - DDR2 Memory IC 512Mb (32M x 16) Parallel 333MHz 450ns 84-TWBGA (8x12.5)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS43DR16320E-3DBLI-TR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR2 Memory IC 512Mb (32M x 16) Parallel 333MHz 450ns 84-TWBGA (8x12.5)

SDRAM - DDR2 Memory IC 512Mb (32M x 16) Parallel 333MHz 450ns 84-TWBGA (8x12.5)

Buy Now Datasheet
Memory - SDRAM - IS43DR16320E-3DBLI-TR - 806089-IS43DR16320E-3DBLI-TR - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - IS43DR16320E-3DBLI-TR
806089-IS43DR16320E-3DBLI-TR
Memory - SDRAM - IS43DR16320E-3DBLI-TR 806089-IS43DR16320E-3DBLI-TR
Manufacturer: ISSI, Integrated Silicon Solution Inc Win Source Part Number: 806089-IS43DR16320E- 3DBLI-TR Packaging: Reel Mounting Style: SMD Technology: SDRAM - DDR2 Memory Type: Volatile Memory Size: 512Mb (32M x 16) Access Time: 450ns Supplier Device Package: 84-TWBGA (8x12.5) Temperature Range - Operating: -40°C ~ 85°C Memory Format: DRAM Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Manufacturer Package: 84-TFBGA Popularity: Medium Fake Threat In the Open Market: 76 pct. Supply and Demand Status: Balance Manufacturer Pack Quantity: 2,500 MSL Level: 3 (168 Hours) Supply Voltage (V): 1.7V ~ 1.9V

Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 806089-IS43DR16320E-3DBLI-TR
Packaging: Reel
Mounting Style: SMD
Technology: SDRAM - DDR2
Memory Type: Volatile
Memory Size: 512Mb (32M x 16)
Access Time: 450ns
Supplier Device Package: 84-TWBGA (8x12.5)
Temperature Range - Operating: -40°C ~ 85°C
Memory Format: DRAM
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Manufacturer Package: 84-TFBGA
Popularity: Medium
Fake Threat In the Open Market: 76 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 2,500
MSL Level: 3 (168 Hours)
Supply Voltage (V): 1.7V ~ 1.9V

Buy Now
IC DRAM 512MBIT PARALLEL 84TWBGA

IC DRAM 512MBIT PARALLEL 84TWBGA

Supplier's Site Datasheet
Memory IC and Storage Component - 774-IS43DR16320E-3DBLI-TR - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-IS43DR16320E-3DBLI-TR
Memory IC and Storage Component 774-IS43DR16320E-3DBLI-TR
IC DRAM 512MBIT PAR 84TWBGA Product overview: IS43DR16320E-3DBLI-T R from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43DR16320E-3DB LI-TR can be used for catalog matching and distributor lookup.

IC DRAM 512MBIT PAR 84TWBGA Product overview: IS43DR16320E-3DBLI-TR from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43DR16320E-3DBLI-TR can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
IC DRAM 512MBIT PARALLEL 84TWBGA

IC DRAM 512MBIT PARALLEL 84TWBGA

Supplier's Site Datasheet
SDRAM - DDR2 Memory IC 512Mbit Parallel 333 MHz 450 ps 84-TWBGA (8x12.5)

SDRAM - DDR2 Memory IC 512Mbit Parallel 333 MHz 450 ps 84-TWBGA (8x12.5)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS43DR16320E-3DBLI-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS43DR16320E-3DBLI-TR
Integrated Circuits (ICs) - Memory IS43DR16320E-3DBLI-TR
IC DRAM 512MBIT PARALLEL 84TWBGA

IC DRAM 512MBIT PARALLEL 84TWBGA

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS43DR16320E-3DBLI-TR-ND 806089-IS43DR16320E-3DBLI-TR IS43DR16320E-3DBLI-TR 774-IS43DR16320E-3DBLI-TR IS43DR16320E-3DBLI-TR IS43DR16320E-3DBLI-TR IS43DR16320E-3DBLI-TR
Product Name Memory Memory - SDRAM - IS43DR16320E-3DBLI-TR Memory Memory IC and Storage Component Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM Chip Volatile; DRAM Chip SDRAM - DDR2; DRAM Chip DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 C (-40 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits 512000 kbits 512000 kbits 512000 kbits
Package Type 84-TFBGA 84-TFBGA BGA; 84-TFBGA BGA
Supply Voltage 1.7V ~ 1.9V 1.7V ~ 1.9V 1.7V ~ 1.9V 1.7 1.7V ~ 1.9V 1.7V ~ 1.9V
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