IC DRAM 128MBIT PAR 54TSOP II
SDRAM Memory IC 128Mb (16M x 8) Parallel 166MHz 5.4ns 54-TSOP II
SDRAM Memory IC 128Mbit Parallel 166 MHz 5.4 ns 54-TSOP II
128M, 3.3v, SDRAM, 16Mx8, 166Mhz, 54 pin TSOP II (400 mil) RoHS, IT, T&R
IC DRAM 128MBIT PAR 54TSOP II
IC DRAM 128MBIT PAR 54TSOP II
| ODG (Origin Data Global) | DigiKey | Quarktwin Technology Ltd. | Newark, An Avnet Company | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS42S81600F-6TLI-TR | IS42S81600F-6TLI-TR-ND | IS42S81600F-6TLI-TR | 77T0529 | IS42S81600F-6TLI-TR | IS42S81600F-6TLI-TR |
| Product Name | Memory | Memory | Memory | 128M, 3.3V, Sdram, 16Mx8, 166Mhz, 54 Pin Tsop Ii (400 Mil) Rohs, It, T&r Integrated Silicon Solution (Issi) | Memory | Integrated Circuits (ICs) - Memory |
| Memory Category | SDRAM; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip |
| Data Rate | 166 MHz | 166 MHz | ||||
| Access Time | 5.4 ns | 5.4 ns | 5.4 ns | 5.4 ns | ||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) |
