SDRAM Memory IC 128Mb (16M x 8) Parallel 166MHz 5.4ns 54-TSOP II
IC DRAM 128MBIT PAR 54TSOP II
IC DRAM 128MBIT PAR 54TSOP II
IC DRAM 128MBIT PAR 54TSOP II
128M, 3.3v, SDRAM, 16Mx8, 166Mhz, 54 pin TSOP II (400 mil) RoHS, IT, T&R
SDRAM Memory IC 128Mbit Parallel 166 MHz 5.4 ns 54-TSOP II
| DigiKey | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Newark, An Avnet Company | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS42S81600F-6TLI-TR-ND | IS42S81600F-6TLI-TR | IS42S81600F-6TLI-TR | IS42S81600F-6TLI-TR | 77T0529 | IS42S81600F-6TLI-TR |
| Product Name | Memory | Memory | Integrated Circuits (ICs) - Memory | Memory | 128M, 3.3V, Sdram, 16Mx8, 166Mhz, 54 Pin Tsop Ii (400 Mil) Rohs, It, T&r Integrated Silicon Solution (Issi) | Memory |
| Memory Category | DRAM Chip | SDRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM Chip | DRAM; DRAM Chip |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Density | 128000 kbits | 128000 kbits | 128000 kbits | 128000 kbits | 128000 kbits | |
| Package Type | TSOP; "54-TSOP (0.400"", 10.16mm Width)" | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP (0.400\", 10.16mm Width) |
