SDRAM Memory IC 128Mb (16M x 8) Parallel 166MHz 5.4ns 54-TSOP II
IC DRAM 128MBIT PAR 54TSOP II
SDRAM Memory IC 128Mbit Parallel 166 MHz 5.4 ns 54-TSOP II
IC DRAM 128MBIT PAR 54TSOP II
128M, 3.3v, SDRAM, 16Mx8, 166Mhz, 54 pin TSOP II (400 mil) RoHS, IT, T&R
IC DRAM 128MBIT PAR 54TSOP II
| DigiKey | ODG (Origin Data Global) | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS42S81600F-6TLI-TR-ND | IS42S81600F-6TLI-TR | IS42S81600F-6TLI-TR | IS42S81600F-6TLI-TR | 77T0529 | IS42S81600F-6TLI-TR |
| Product Name | Memory | Memory | Memory | Integrated Circuits (ICs) - Memory | 128M, 3.3V, Sdram, 16Mx8, 166Mhz, 54 Pin Tsop Ii (400 Mil) Rohs, It, T&r Integrated Silicon Solution (Issi) | Memory |
| Memory Category | DRAM Chip | SDRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Density | 128000 kbits | 128000 kbits | 128000 kbits | 128000 kbits | 128000 kbits | |
| Package Type | TSOP; "54-TSOP (0.400"", 10.16mm Width)" | 54-TSOP (0.400", 10.16mm Width) | 54-TSOP (0.400\", 10.16mm Width) |
