Integrated Silicon Solution, Inc. Memory IC and Storage Component IS42VM16320E-6BLI-TR

Description
IC DRAM 512MBIT PAR 54TFBGA Product overview: IS42VM16320E-6BLI-TR from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS42VM16320E-6BL I-TR can be used for catalog matching and distributor lookup.
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Description
IC DRAM 512MBIT PAR 54TFBGA Product overview: IS42VM16320E-6BLI-TR from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS42VM16320E-6BL I-TR can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Memory IC and Storage Component - 774-IS42VM16320E-6BLI-TR - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-IS42VM16320E-6BLI-TR
Memory IC and Storage Component 774-IS42VM16320E-6BLI-TR
IC DRAM 512MBIT PAR 54TFBGA Product overview: IS42VM16320E-6BLI-TR from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS42VM16320E-6BL I-TR can be used for catalog matching and distributor lookup.

IC DRAM 512MBIT PAR 54TFBGA Product overview: IS42VM16320E-6BLI-TR from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS42VM16320E-6BLI-TR can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
DRAM - 1447410-IS42VM16320E-6BLI-TR - Win Source Electronics
Laguna Hills, CA, United States
Category: DRAM Win Source Part Number: 1447410-IS42VM16320E -6BLI-TR Manufacturer: ISSI, Integrated Silicon Solution Inc

Category: DRAM
Win Source Part Number: 1447410-IS42VM16320E-6BLI-TR
Manufacturer: ISSI, Integrated Silicon Solution Inc

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Memory - IS42VM16320E-6BLI-TR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile Memory IC 512Mb (32M x 16) Parallel 166MHz 5.5ns 54-TFBGA (8x8)

SDRAM - Mobile Memory IC 512Mb (32M x 16) Parallel 166MHz 5.5ns 54-TFBGA (8x8)

Buy Now Datasheet
IC DRAM 512MBIT PARALLEL 54TFBGA

IC DRAM 512MBIT PARALLEL 54TFBGA

Supplier's Site Datasheet
Memory - IS42VM16320E-6BLI-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile Memory IC 512Mbit Parallel 166 MHz 5.5 ns 54-TFBGA (8x8)

SDRAM - Mobile Memory IC 512Mbit Parallel 166 MHz 5.5 ns 54-TFBGA (8x8)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS42VM16320E-6BLI-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS42VM16320E-6BLI-TR
Integrated Circuits (ICs) - Memory IS42VM16320E-6BLI-TR
IC DRAM 512MBIT PARALLEL 54TFBGA

IC DRAM 512MBIT PARALLEL 54TFBGA

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics DigiKey Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 774-IS42VM16320E-6BLI-TR 1447410-IS42VM16320E-6BLI-TR IS42VM16320E-6BLI-TR-ND IS42VM16320E-6BLI-TR IS42VM16320E-6BLI-TR IS42VM16320E-6BLI-TR
Product Name Memory IC and Storage Component DRAM Memory Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM Chip DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 8 ns 5.5 ns 5.5 ns 5.5 ns
Operating Temperature -40 C (-40 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits 512000 kbits 512000 kbits
Number of Words 8000 k
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