Integrated Silicon Solution, Inc. Memory IS42S32800D-75EBI-TR

Description
SDRAM Memory IC 256Mb (8M x 32) Parallel 133MHz 5.5ns 90-TFBGA (8x13)
Request a Quote Datasheet
Description
SDRAM Memory IC 256Mb (8M x 32) Parallel 133MHz 5.5ns 90-TFBGA (8x13)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS42S32800D-75EBI-TR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM Memory IC 256Mb (8M x 32) Parallel 133MHz 5.5ns 90-TFBGA (8x13)

SDRAM Memory IC 256Mb (8M x 32) Parallel 133MHz 5.5ns 90-TFBGA (8x13)

Buy Now Datasheet
IC DRAM 256MBIT PARALLEL 90TFBGA

IC DRAM 256MBIT PARALLEL 90TFBGA

Supplier's Site Datasheet
Memory - IS42S32800D-75EBI-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 256Mbit Parallel 133 MHz 5.5 ns 90-TFBGA (8x13)

SDRAM Memory IC 256Mbit Parallel 133 MHz 5.5 ns 90-TFBGA (8x13)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS42S32800D-75EBI-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS42S32800D-75EBI-TR
Integrated Circuits (ICs) - Memory IS42S32800D-75EBI-TR
IC DRAM 256MBIT PARALLEL 90TFBGA

IC DRAM 256MBIT PARALLEL 90TFBGA

Supplier's Site

Technical Specifications

  DigiKey Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS42S32800D-75EBI-TR-ND IS42S32800D-75EBI-TR IS42S32800D-75EBI-TR IS42S32800D-75EBI-TR
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 256000 kbits 256000 kbits 256000 kbits 256000 kbits
Package Type 90-TFBGA BGA; 90-TFBGA BGA
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