Integrated Silicon Solution, Inc. Memory IS42VM16320E-75BLI-TR

Description
SDRAM - Mobile Memory IC 512Mb (32M x 16) Parallel 133MHz 6ns 54-TFBGA (8x8)
Request a Quote Datasheet
Description
SDRAM - Mobile Memory IC 512Mb (32M x 16) Parallel 133MHz 6ns 54-TFBGA (8x8)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS42VM16320E-75BLI-TR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile Memory IC 512Mb (32M x 16) Parallel 133MHz 6ns 54-TFBGA (8x8)

SDRAM - Mobile Memory IC 512Mb (32M x 16) Parallel 133MHz 6ns 54-TFBGA (8x8)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 1356853-IS42VM16320E-75BLI-TR - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory - Memory
1356853-IS42VM16320E-75BLI-TR
Integrated Circuits (ICs) - Memory - Memory 1356853-IS42VM16320E-75BLI-TR
Win Source Part Number: 1356853-IS42VM16320E -75BLI-TR Category: Integrated Circuits (ICs) - Memory - Memory Package: Tape & Reel Temperature Range - Operating: -40°C ~ 85°C (TA) Fake Threat In the Open Market: 53 pct. MSL Level: 3 (168 Hours) Mfr: ISSI, Integrated Silicon Solution Inc Product Status: Active Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8) Base Product Number: IS42VM16320 Technology: SDRAM - Mobile Mounting Type: Surface Mount HTSUS: 8542.32.0028 REACH Status: REACH Unaffected ECCN: EAR99 Voltage - Supply: 1.7V ~ 1.95V Memory Type: Volatile Memory Format: DRAM Memory Size: 512Mbit Memory Organization: 32M x 16 Memory Interface: Parallel Clock Frequency: 133 MHz Access Time: 6 ns

Win Source Part Number: 1356853-IS42VM16320E-75BLI-TR
Category: Integrated Circuits (ICs) - Memory - Memory
Package: Tape & Reel
Temperature Range - Operating: -40°C ~ 85°C (TA)
Fake Threat In the Open Market: 53 pct.
MSL Level: 3 (168 Hours)
Mfr: ISSI, Integrated Silicon Solution Inc
Product Status: Active
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)
Base Product Number: IS42VM16320
Technology: SDRAM - Mobile
Mounting Type: Surface Mount
HTSUS: 8542.32.0028
REACH Status: REACH Unaffected
ECCN: EAR99
Voltage - Supply: 1.7V ~ 1.95V
Memory Type: Volatile
Memory Format: DRAM
Memory Size: 512Mbit
Memory Organization: 32M x 16
Memory Interface: Parallel
Clock Frequency: 133 MHz
Access Time: 6 ns

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS42VM16320E-75BLI-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS42VM16320E-75BLI-TR
Integrated Circuits (ICs) - Memory IS42VM16320E-75BLI-TR
IC DRAM 512MBIT PARALLEL 54TFBGA

IC DRAM 512MBIT PARALLEL 54TFBGA

Supplier's Site
SDRAM - Mobile Memory IC 512Mbit Parallel 133 MHz 6 ns 54-TFBGA (8x8)

SDRAM - Mobile Memory IC 512Mbit Parallel 133 MHz 6 ns 54-TFBGA (8x8)

Buy Now Datasheet
512M, 1.8V, Mobile Sdram, 32Mx16, 133Mhz, 54 Ball Bga (8Mm X 8Mm) Rohs, T&r Integrated Silicon Solution (Issi) - 29X5182 - Newark, An Avnet Company
Chicago, IL, United States
512M, 1.8V, Mobile Sdram, 32Mx16, 133Mhz, 54 Ball Bga (8Mm X 8Mm) Rohs, T&r Integrated Silicon Solution (Issi)
29X5182
512M, 1.8V, Mobile Sdram, 32Mx16, 133Mhz, 54 Ball Bga (8Mm X 8Mm) Rohs, T&r Integrated Silicon Solution (Issi) 29X5182
512M, 1.8V, Mobile SDRAM, 32Mx16, 133Mhz, 54 ball BGA (8Mm x 8mm) RoHS, T&R

512M, 1.8V, Mobile SDRAM, 32Mx16, 133Mhz, 54 ball BGA (8Mm x 8mm) RoHS, T&R

Supplier's Site
IC DRAM 512MBIT PARALLEL 54TFBGA

IC DRAM 512MBIT PARALLEL 54TFBGA

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Newark, An Avnet Company Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS42VM16320E-75BLI-TR-ND 1356853-IS42VM16320E-75BLI-TR IS42VM16320E-75BLI-TR IS42VM16320E-75BLI-TR 29X5182 IS42VM16320E-75BLI-TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Integrated Circuits (ICs) - Memory Memory 512M, 1.8V, Mobile Sdram, 32Mx16, 133Mhz, 54 Ball Bga (8Mm X 8Mm) Rohs, T&r Integrated Silicon Solution (Issi) Memory
Memory Category DRAM Chip Volatile; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits 512000 kbits
Package Type 54-TFBGA BGA BGA; 54-TFBGA
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