Integrated Silicon Solution, Inc. Memory IS42VM16200D-6BLI-TR

Description
IC DRAM 32MBIT PARALLEL 54TFBGA
Datasheet
Description
IC DRAM 32MBIT PARALLEL 54TFBGA
Datasheet

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Description
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IC DRAM 32MBIT PARALLEL 54TFBGA

IC DRAM 32MBIT PARALLEL 54TFBGA

Supplier's Site Datasheet
Memory - IS42VM16200D-6BLI-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile Memory IC 32Mbit Parallel 166 MHz 5.5 ns 54-TFBGA (8x8)

SDRAM - Mobile Memory IC 32Mbit Parallel 166 MHz 5.5 ns 54-TFBGA (8x8)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS42VM16200D-6BLI-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS42VM16200D-6BLI-TR
Integrated Circuits (ICs) - Memory IS42VM16200D-6BLI-TR
IC DRAM 32MBIT PARALLEL 54TFBGA

IC DRAM 32MBIT PARALLEL 54TFBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS42VM16200D-6BLI-TR IS42VM16200D-6BLI-TR IS42VM16200D-6BLI-TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 5.5 ns 5.5 ns 5.5 ns
Density 32000 kbits 32000 kbits 32000 kbits
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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