SDRAM - Mobile Memory IC 512Mb (16M x 32) Parallel 133MHz 6ns 90-TFBGA (8x13)
SDRAM - Mobile Memory IC 512Mbit Parallel 133 MHz 6 ns 90-TFBGA (8x13)
IC DRAM 512MBIT PARALLEL 90TFBGA
IC DRAM 512MBIT PARALLEL 90TFBGA
DRAM Chip SDRAM 512M-Bit 16Mx32 1.8V 90-Pin WBGA
| DigiKey | Quarktwin Technology Ltd. | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IS42VM32160D-75BLI-ND | IS42VM32160D-75BLI | IS42VM32160D-75BLI | IS42VM32160D-75BLI | 413-IS42VM32160D-75BLI |
| Product Name | Memory | Memory | Memory | Integrated Circuits (ICs) - Memory | DRAM Chip SDRAM 512M-Bit 16Mx32 1.8V 90-Pin WBGA |
| Memory Category | DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | Volatile; DRAM Chip |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |
| Density | 512000 kbits | 512000 kbits | 512000 kbits | 512000 kbits | 4096000 kbits |
| Package Type | 90-TFBGA | BGA; 90-TFBGA | BGA | 90-TFBGA | |
| Supply Voltage | 1.7V ~ 1.95V | 1.7V ~ 1.95V | 1.7V ~ 1.95V | 1.8V |
