Integrated Silicon Solution, Inc. Memory IS42VM32400G-6BLI-TR

Description
SDRAM - Mobile Memory IC 128Mb (4M x 32) Parallel 166MHz 5.5ns 90-TFBGA (8x13)
Request a Quote Datasheet
Description
SDRAM - Mobile Memory IC 128Mb (4M x 32) Parallel 166MHz 5.5ns 90-TFBGA (8x13)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS42VM32400G-6BLI-TR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - Mobile Memory IC 128Mb (4M x 32) Parallel 166MHz 5.5ns 90-TFBGA (8x13)

SDRAM - Mobile Memory IC 128Mb (4M x 32) Parallel 166MHz 5.5ns 90-TFBGA (8x13)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS42VM32400G-6BLI-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS42VM32400G-6BLI-TR
Integrated Circuits (ICs) - Memory IS42VM32400G-6BLI-TR
IC DRAM 128MBIT PARALLEL 90TFBGA

IC DRAM 128MBIT PARALLEL 90TFBGA

Supplier's Site
IC DRAM 128MBIT PARALLEL 90TFBGA

IC DRAM 128MBIT PARALLEL 90TFBGA

Supplier's Site Datasheet
Memory - IS42VM32400G-6BLI-TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile Memory IC 128Mbit Parallel 166 MHz 5.5 ns 90-TFBGA (8x13)

SDRAM - Mobile Memory IC 128Mbit Parallel 166 MHz 5.5 ns 90-TFBGA (8x13)

Buy Now Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS42VM32400G-6BLI-TR-ND IS42VM32400G-6BLI-TR IS42VM32400G-6BLI-TR IS42VM32400G-6BLI-TR
Product Name Memory Integrated Circuits (ICs) - Memory Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 128000 kbits 128000 kbits 128000 kbits 128000 kbits
Package Type 90-TFBGA BGA BGA; 90-TFBGA
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