Integrated Silicon Solution, Inc. Memory IS43DR16320C-3DBL

Description
IC DRAM 512M PARALLEL 84TWBGA
Request a Quote Datasheet
Description
IC DRAM 512M PARALLEL 84TWBGA
Request a Quote Datasheet

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Product
Description
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IC DRAM 512M PARALLEL 84TWBGA

IC DRAM 512M PARALLEL 84TWBGA

Supplier's Site Datasheet
Memory - 706-1203-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR2 Memory IC 512Mb (32M x 16) Parallel 333MHz 450ps 84-TWBGA (8x12.5)

SDRAM - DDR2 Memory IC 512Mb (32M x 16) Parallel 333MHz 450ps 84-TWBGA (8x12.5)

Buy Now Datasheet
Memory - SDRAM - IS43DR16320C-3DBL - 811593-IS43DR16320C-3DBL - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - IS43DR16320C-3DBL
811593-IS43DR16320C-3DBL
Memory - SDRAM - IS43DR16320C-3DBL 811593-IS43DR16320C-3DBL
Manufacturer: ISSI, Integrated Silicon Solution Inc Win Source Part Number: 811593-IS43DR16320C- 3DBL Packaging: Tray Mounting Style: SMD Technology: SDRAM - DDR2 Memory Type: Volatile Memory Size: 512Mb (32M x 16) Access Time: 450ps Supplier Device Package: 84-TWBGA (8x12.5) Temperature Range - Operating: 0°C ~ 70°C Memory Format: DRAM Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Manufacturer Package: 84-TFBGA Popularity: Low Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 209 MSL Level: 3 (168 Hours) Supply Voltage (V): 1.7V ~ 1.9V

Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 811593-IS43DR16320C-3DBL
Packaging: Tray
Mounting Style: SMD
Technology: SDRAM - DDR2
Memory Type: Volatile
Memory Size: 512Mb (32M x 16)
Access Time: 450ps
Supplier Device Package: 84-TWBGA (8x12.5)
Temperature Range - Operating: 0°C ~ 70°C
Memory Format: DRAM
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Manufacturer Package: 84-TFBGA
Popularity: Low
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 209
MSL Level: 3 (168 Hours)
Supply Voltage (V): 1.7V ~ 1.9V

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IC DRAM 512M PARALLEL 84TWBGA

IC DRAM 512M PARALLEL 84TWBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - IS43DR16320C-3DBL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
IS43DR16320C-3DBL
Integrated Circuits (ICs) - Memory - Memory IS43DR16320C-3DBL
IC DRAM 512MBIT PAR 84TWBGA

IC DRAM 512MBIT PAR 84TWBGA

Supplier's Site
Memory - IS43DR16320C-3DBL - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 512Mbit Parallel 333 MHz 450 ps 84-TWBGA (8x12.5)

SDRAM - DDR2 Memory IC 512Mbit Parallel 333 MHz 450 ps 84-TWBGA (8x12.5)

Buy Now Datasheet

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS43DR16320C-3DBL 706-1203-ND 811593-IS43DR16320C-3DBL IS43DR16320C-3DBL IS43DR16320C-3DBL IS43DR16320C-3DBL
Product Name Memory Memory Memory - SDRAM - IS43DR16320C-3DBL Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SDRAM - DDR2; DRAM Chip DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Data Rate 333 MHz 333 MHz
Access Time 0.4500 ns 0.4500 ns 0.4500 ns 0.4500 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
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