Integrated Silicon Solution, Inc. Memory IS42SM32100D-6BLI

Description
IC DRAM 32MBIT PARALLEL 54TFBGA
Datasheet
Description
IC DRAM 32MBIT PARALLEL 54TFBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC DRAM 32MBIT PARALLEL 54TFBGA

IC DRAM 32MBIT PARALLEL 54TFBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - IS42SM32100D-6BLI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS42SM32100D-6BLI
Integrated Circuits (ICs) - Memory IS42SM32100D-6BLI
IC DRAM 32MBIT PARALLEL 54TFBGA

IC DRAM 32MBIT PARALLEL 54TFBGA

Supplier's Site
Memory - IS42SM32100D-6BLI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile Memory IC 32Mbit Parallel 166 MHz 5.5 ns 54-TFBGA (8x8)

SDRAM - Mobile Memory IC 32Mbit Parallel 166 MHz 5.5 ns 54-TFBGA (8x8)

Buy Now Datasheet

Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number IS42SM32100D-6BLI IS42SM32100D-6BLI IS42SM32100D-6BLI
Product Name Memory Integrated Circuits (ICs) - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 5.5 ns 5.5 ns 5.5 ns
Density 32000 kbits 32000 kbits 32000 kbits
Data Rate 166 MHz
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 2420767 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Operating Temperature -40 C (-40 F)
View Details
Memory - 4720BDC - Quarktwin Technology Ltd.
Texas Instruments
Specs
Memory Category RAM
Operating Temperature 0 to 70 C (32 to 158 F)
Density 0 kbits
View Details
2 suppliers
Memory - AS28C010 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 120 to 250 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details