IC DRAM 1GBIT PARALLEL 84TWBGA Product overview: IS43DR16640C-25DBL from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43DR16640C-25D
Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 808149-IS43DR16640C-
Packaging: Tray
Mounting Style: SMD
Technology: SDRAM - DDR2
Memory Type: Volatile
Memory Size: 1Gb (64M x 16)
Access Time: 400ps
Supplier Device Package: 84-TWBGA (8x12.5)
Temperature Range - Operating: 0°C ~ 85°C (TC)
Memory Format: DRAM
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Manufacturer Package: 84-TFBGA
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance
Manufacturer Pack Quantity: 209
MSL Level: 3 (168 Hours)
Supply Voltage (V): 1.7V ~ 1.9V
IC DRAM 1GBIT PARALLEL 84TWBGA
SDRAM - DDR2 Memory IC 1Gb (64M x 16) Parallel 400MHz 400ps 84-TWBGA (8x12.5)
SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 400 ps 84-TWBGA (8x12.5)
IC DRAM 1GBIT PARALLEL 84TWBGA
IC DRAM 1GBIT PARALLEL 84TWBGA
DRAM, 64M X 16BIT, WBGA-84; DRAM Type:DDR2; DRAM Density:1Gbit; DRAM Memory Configuration:64M x 16bit; Clock Frequency:400MHz; Memory Case Style:WBGA; No. of Pins:84Pins; Supply Voltage Nom:1.8V; Access Time:-; MSL:- RoHS Compliant: Yes
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | DigiKey | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-IS43DR16640C-25DBL | 808149-IS43DR16640C-25DBL | IS43DR16640C-25DBL | 706-1562-ND | IS43DR16640C-25DBL | IS43DR16640C-25DBL | IS43DR16640C-25DBL | 81Y1253 |
| Product Name | Memory IC and Storage Component | Memory - SDRAM - IS43DR16640C-25DBL | Memory | Memory | Memory | Integrated Circuits (ICs) - Memory | Memory | Dram, 64M X 16Bit, Wbga-84; Dram Type Integrated Silicon Solution (Issi) |
| Memory Category | DRAM Chip | Volatile; DRAM Chip | SDRAM - DDR2; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM Chip |
| Access Time | 0.4000 ns | 0.4000 ns | 0.4000 ns | 0.4000 ns | 0.4000 ns | 0.4000 ns | ||
| Operating Temperature | 0 C (32 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | 0 to 85 C (32 to 185 F) | ||
| Density | 1000000 kbits | 1000000 kbits | 1000000 kbits | 1000000 kbits | 1000000 kbits | 1000000 kbits | ||
| Number of Words | 8000 k |
