IC DRAM 1GBIT PARALLEL 84TWBGA Product overview: IS43DR16640B-3DBLI from Integrated Silicon Solution, Inc. (ISSI) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IS43DR16640B-3DB
IC DRAM 1G PARALLEL 84TWBGA
Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 1047993-IS43DR16640B
Packaging: Tray
Mounting: SMD (SMT)
Technology: SDRAM - DDR2
Memory Type: Volatile
Memory Size: 1Gb (64M x 16)
Access Time: 450ps
Family Name: IS43DR16640B
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 84-TWBGA (8x12.5)
Supply Voltage - Operating: 1.7 V to 1.9 V
Memory Format: DRAM
Max Frequency: 333MHz
Alternative Parts (Cross-Reference): IS46DR16640B-3DBLA1-
Introduction Date: January 20, 2012
ECCN: EAR99
Country of Origin: Taiwan
Estimated EOL Date: Obsolete / End of life
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
SDRAM - DDR2 Memory IC 1Gb (64M x 16) Parallel 333MHz 450ps 84-TWBGA (8x12.5)
IC DRAM 1G PARALLEL 84TWBGA
IC DRAM 1G PARALLEL 84TWBGA
SDRAM - DDR2 Memory IC 1Gbit Parallel 333 MHz 450 ps 84-TWBGA (8x12.5)
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | Win Source Electronics | DigiKey | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-IS43DR16640B-3DBLI | IS43DR16640B-3DBLI | 1047993-IS43DR16640B-3DBLI | 706-1277-ND | IS43DR16640B-3DBLI | IS43DR16640B-3DBLI | IS43DR16640B-3DBLI |
| Product Name | Memory IC and Storage Component | Memory | Memory - SDRAM - IS43DR16640B-3DBLI | Memory | Memory | Integrated Circuits (ICs) - Memory | Memory |
| Memory Category | DRAM Chip | SDRAM - DDR2; DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 0.4500 ns | 0.4500 ns | 0.4500 ns | 0.4500 ns | 0.4500 ns | 0.4500 ns | |
| Operating Temperature | -40 C (-40 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |
| Density | 1000000 kbits | 1000000 kbits | 1000000 kbits | 1000000 kbits | 1000000 kbits | ||
| Number of Words | 8000 k |
