Integrated Silicon Solution, Inc. Memory - SDRAM - IS42S83200B-7TL IS42S83200B-7TL

Description
Manufacturer: ISSI, Integrated Silicon Solution Inc Win Source Part Number: 001985-IS42S83200B-7 TL Packaging: Tray Mounting: SMD (SMT) Technology: SDRAM Memory Type: Volatile Memory Size: 256Mb (32M x 8) Access Time: 5.4ns Categories: Integrated Circuits Status: Obsolete(EOL) Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 54-TSOP II Supply Voltage - Operating: 3 V to 3.6 V Memory Format: DRAM Max Frequency: 143MHz Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited
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Description
Manufacturer: ISSI, Integrated Silicon Solution Inc Win Source Part Number: 001985-IS42S83200B-7 TL Packaging: Tray Mounting: SMD (SMT) Technology: SDRAM Memory Type: Volatile Memory Size: 256Mb (32M x 8) Access Time: 5.4ns Categories: Integrated Circuits Status: Obsolete(EOL) Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 54-TSOP II Supply Voltage - Operating: 3 V to 3.6 V Memory Format: DRAM Max Frequency: 143MHz Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited
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Datasheet
Datasheet Summary
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The IS42S83200B-7TL is a 256Mb synchronous DRAM memory chip from Quarktwin Technology Ltd., designed to operate at a clock frequency of 143 MHz. It features a fully synchronous interface with all signals referenced to the positive clock edge, allowing for high-speed data transfer through a pipeline architecture. The memory is organized into four banks, each capable of hiding row access and precharge times, which enhances performance during burst operations. This memory chip operates on a power supply of 3.3V for both VDD and VDDQ, and it supports a LVTTL interface. It offers programmable burst lengths of 1, 2, 4, 8, or full page, along with programmable CAS latency options of 2 or 3 clocks. The device includes an auto-refresh mode and a self-refresh capability, ensuring efficient power management with 8K refresh cycles every 64 ms. The IS42S83200B-7TL is available in a 54-pin TSOP-II package and is lead-free, making it suitable for various applications, including those requiring compliance with environmental regulations. Its industrial temperature range of -40¬8C to 85¬8C further enhances its versatility for use in demanding environments.

Datasheet Summary
Powered by GS/AI

The IS42S83200B-7TL is a 256Mb synchronous DRAM memory chip from Quarktwin Technology Ltd., designed to operate at a clock frequency of 143 MHz. It features a fully synchronous interface with all signals referenced to the positive clock edge, allowing for high-speed data transfer through a pipeline architecture. The memory is organized into four banks, each capable of hiding row access and precharge times, which enhances performance during burst operations. This memory chip operates on a power supply of 3.3V for both VDD and VDDQ, and it supports a LVTTL interface. It offers programmable burst lengths of 1, 2, 4, 8, or full page, along with programmable CAS latency options of 2 or 3 clocks. The device includes an auto-refresh mode and a self-refresh capability, ensuring efficient power management with 8K refresh cycles every 64 ms. The IS42S83200B-7TL is available in a 54-pin TSOP-II package and is lead-free, making it suitable for various applications, including those requiring compliance with environmental regulations. Its industrial temperature range of -40¬8C to 85¬8C further enhances its versatility for use in demanding environments.

Suppliers

Company
Product
Description
Supplier Links
Memory - SDRAM - IS42S83200B-7TL - 001985-IS42S83200B-7TL - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - IS42S83200B-7TL
001985-IS42S83200B-7TL
Memory - SDRAM - IS42S83200B-7TL 001985-IS42S83200B-7TL
Manufacturer: ISSI, Integrated Silicon Solution Inc Win Source Part Number: 001985-IS42S83200B-7 TL Packaging: Tray Mounting: SMD (SMT) Technology: SDRAM Memory Type: Volatile Memory Size: 256Mb (32M x 8) Access Time: 5.4ns Categories: Integrated Circuits Status: Obsolete(EOL) Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 54-TSOP II Supply Voltage - Operating: 3 V to 3.6 V Memory Format: DRAM Max Frequency: 143MHz Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited

Manufacturer: ISSI, Integrated Silicon Solution Inc
Win Source Part Number: 001985-IS42S83200B-7TL
Packaging: Tray
Mounting: SMD (SMT)
Technology: SDRAM
Memory Type: Volatile
Memory Size: 256Mb (32M x 8)
Access Time: 5.4ns
Categories: Integrated Circuits
Status: Obsolete(EOL)
Temperature Range - Operating: 0°C to 70°C (TA)
Case / Package: 54-TSOP II
Supply Voltage - Operating: 3 V to 3.6 V
Memory Format: DRAM
Max Frequency: 143MHz
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Memory - 706-1027-ND - DigiKey
Thief River Falls, MN, United States
SDRAM Memory IC 256Mb (32M x 8) Parallel 143MHz 5.4ns 54-TSOP II

SDRAM Memory IC 256Mb (32M x 8) Parallel 143MHz 5.4ns 54-TSOP II

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IS42S83200B-7TL - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS42S83200B-7TL
Integrated Circuits (ICs) - Memory IS42S83200B-7TL
IC DRAM 256MBIT PAR 54TSOP II

IC DRAM 256MBIT PAR 54TSOP II

Supplier's Site
IC DRAM 256MBIT PAR 54TSOP II

IC DRAM 256MBIT PAR 54TSOP II

Supplier's Site Datasheet
Memory - IS42S83200B-7TL - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 256Mbit Parallel 143 MHz 5.4 ns 54-TSOP II

SDRAM Memory IC 256Mbit Parallel 143 MHz 5.4 ns 54-TSOP II

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 001985-IS42S83200B-7TL 706-1027-ND IS42S83200B-7TL IS42S83200B-7TL IS42S83200B-7TL
Product Name Memory - SDRAM - IS42S83200B-7TL Memory Integrated Circuits (ICs) - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Access Time 5.4 ns 5.4 ns 5.4 ns 5.4 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Package Type SOP; 54-TSOP II TSOP; "54-TSOP (0.400"", 10.16mm Width)" 54-TSOP (0.400\", 10.16mm Width)
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