Integrated Silicon Solution, Inc. Memory IS43DR16160A-5BBLI-TR

Description
SDRAM - DDR2 Memory IC 256Mb (16M x 16) Parallel 200MHz 600ps 84-TWBGA (8x12.5)
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Description
SDRAM - DDR2 Memory IC 256Mb (16M x 16) Parallel 200MHz 600ps 84-TWBGA (8x12.5)
Request a Quote
Datasheet
Datasheet Summary
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The IS43DR16160A-5BBLI-TR is a 256Mb DDR2 SDRAM memory chip from Quarktwin Technology Ltd. It operates at a voltage of 1.8V ¬±0.1V and features a double data rate interface, allowing for two data transfers per clock cycle. The device supports a 4-bit prefetch architecture and includes four internal banks for concurrent operations. Programmable CAS latency options of 3, 4, 5, and 6 are available, along with programmable burst lengths of 4 or 8. This memory chip is packaged in an 84-ball WBGA format measuring 8mm x 12.5mm. It is suitable for commercial temperature ranges from 0¬8C to 85¬8C, as well as industrial and automotive applications with extended temperature ranges. The device is designed for high-speed operation, with cycle times as low as 2.5ns at CL=6 for DDR2-800E. The IS43DR16160A-5BBLI-TR is ideal for applications requiring reliable and efficient memory performance.

Datasheet Summary
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The IS43DR16160A-5BBLI-TR is a 256Mb DDR2 SDRAM memory chip from Quarktwin Technology Ltd. It operates at a voltage of 1.8V ¬±0.1V and features a double data rate interface, allowing for two data transfers per clock cycle. The device supports a 4-bit prefetch architecture and includes four internal banks for concurrent operations. Programmable CAS latency options of 3, 4, 5, and 6 are available, along with programmable burst lengths of 4 or 8. This memory chip is packaged in an 84-ball WBGA format measuring 8mm x 12.5mm. It is suitable for commercial temperature ranges from 0¬8C to 85¬8C, as well as industrial and automotive applications with extended temperature ranges. The device is designed for high-speed operation, with cycle times as low as 2.5ns at CL=6 for DDR2-800E. The IS43DR16160A-5BBLI-TR is ideal for applications requiring reliable and efficient memory performance.

Suppliers

Company
Product
Description
Supplier Links
Memory - IS43DR16160A-5BBLI-TR-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR2 Memory IC 256Mb (16M x 16) Parallel 200MHz 600ps 84-TWBGA (8x12.5)

SDRAM - DDR2 Memory IC 256Mb (16M x 16) Parallel 200MHz 600ps 84-TWBGA (8x12.5)

Buy Now Datasheet
SDRAM - DDR2 Memory IC 256Mbit Parallel 200 MHz 600 ps 84-TWBGA (8x12.5)

SDRAM - DDR2 Memory IC 256Mbit Parallel 200 MHz 600 ps 84-TWBGA (8x12.5)

Buy Now Datasheet
IC DRAM 256MBIT PARALLEL 84TWBGA

IC DRAM 256MBIT PARALLEL 84TWBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - IS43DR16160A-5BBLI-TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IS43DR16160A-5BBLI-TR
Integrated Circuits (ICs) - Memory IS43DR16160A-5BBLI-TR
IC DRAM 256MBIT PARALLEL 84TWBGA

IC DRAM 256MBIT PARALLEL 84TWBGA

Supplier's Site

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IS43DR16160A-5BBLI-TR-ND IS43DR16160A-5BBLI-TR IS43DR16160A-5BBLI-TR IS43DR16160A-5BBLI-TR
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 256000 kbits 256000 kbits 256000 kbits 256000 kbits
Package Type 84-TFBGA BGA; 84-TFBGA BGA
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