The R6030ENX is a 600V N-channel power MOSFET designed for high-performance applications. It features a maximum continuous drain current of ¬±30A and a maximum power dissipation of 86W, making it suitable for demanding power management tasks. The device has a low on-resistance of 0.130Oc, which contributes to improved efficiency in switching applications. It supports fast switching capabilities, allowing for simpler drive circuits and facilitating parallel usage. The MOSFET is RoHS compliant and features Pb-free plating, aligning with environmental standards. Its operational temperature range extends from -55¬8C to +150¬8C, ensuring reliability in various conditions. The device is packaged in a TO-220FM format, suitable for thermal management in power applications.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
N-Channel 600V 30A (Tc) 40W (Tc) Through Hole TO-220FM
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1325272-R6030ENX
Category: Discrete Semiconductor Products>Transistors
Packaging: Bulk
Standard Package: 500
Mounting: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 40W (Tc)
Supplier Device Package: TO-220FM
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220-3 Full Pack
ECCN: EAR99
Fake Threat In the Open Market: 71
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: R6030ENXCT,R6030ENXC
Base Product Number: R6030
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant
MOSFET N-CH 600V 30A TO220FM
| ROHM Semiconductor USA, LLC | ROHM Semiconductor GmbH | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | R6030ENX | R6030ENX | R6030ENX-ND | 1325272-R6030ENX | R6030ENX | R6030ENX |
| Product Name | 10V Drive Nch MOSFET | 600V 30A TO-220FM, Low-noise Power MOSFET | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 600 volts | 600 volts | ||||
| IDSS | 30000 milliamps | 30000 milliamps | ||||
| PD | 40000 milliwatts | 40000 milliwatts | 40000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | 150 C (302 F) |
