ROHM Semiconductor USA, LLC 10V Drive Nch MOSFET RCX450N20

Description
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Request a Quote Datasheet
Description
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
10V Drive Nch MOSFET - RCX450N20 - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
10V Drive Nch MOSFET
RCX450N20
10V Drive Nch MOSFET RCX450N20
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Supplier's Site Datasheet
10V Drive Nch MOSFET - RCX450N20 - ROHM Semiconductor GmbH
Willich, Germany
10V Drive Nch MOSFET
RCX450N20
10V Drive Nch MOSFET RCX450N20
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RCX450N20 - 1091661-RCX450N20 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RCX450N20
1091661-RCX450N20
TRANSISTORS - Transistors - FETs, MOSFETs - RF - RCX450N20 1091661-RCX450N20
Manufacturer: Rohm Semiconductor Win Source Part Number: 1091661-RCX450N20 Packaging: Bulk Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 2.23W (Ta), 40W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220FM Dimension: TO-220-2 Full Pack Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 45A (Tc) Gate-Source Threshold Voltage: 5V @ 1mA Max Gate Charge: 80nC @ 10V Max Input Capacitance: 4200pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 55 mOhm @ 22.5A, 10V Alternative Parts (Cross-Reference): FKP202; STU36NB20; RCX300N20; Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Limited

Manufacturer: Rohm Semiconductor
Win Source Part Number: 1091661-RCX450N20
Packaging: Bulk
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 2.23W (Ta), 40W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220FM
Dimension: TO-220-2 Full Pack
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 45A (Tc)
Gate-Source Threshold Voltage: 5V @ 1mA
Max Gate Charge: 80nC @ 10V
Max Input Capacitance: 4200pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 55 mOhm @ 22.5A, 10V
Alternative Parts (Cross-Reference): FKP202; STU36NB20; RCX300N20;
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - RCX450N20-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
RCX450N20-ND
Single FETs, MOSFETs RCX450N20-ND
N-Channel 200V 45A (Tc) 2.23W (Ta), 40W (Tc) Through Hole TO-220FM

N-Channel 200V 45A (Tc) 2.23W (Ta), 40W (Tc) Through Hole TO-220FM

Buy Now Datasheet
Single FETs, MOSFETs - RCX450N20 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
RCX450N20
Single FETs, MOSFETs RCX450N20
MOSFET N-CH 200V 45A TO220FM

MOSFET N-CH 200V 45A TO220FM

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET 10V Drive Nch MOSFET

MOSFET 10V Drive Nch MOSFET

Buy Now Datasheet
MOSFET N-CH 200V 45A TO220 - 687-RCX450N20 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 200V 45A TO220
687-RCX450N20
MOSFET N-CH 200V 45A TO220 687-RCX450N20
MOSFET N-CH 200V 45A TO220

MOSFET N-CH 200V 45A TO220

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RCX450N20 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
RCX450N20
Discrete Semiconductor Products - Transistors - FETs, MOSFETs RCX450N20
MOSFET N-CH 200V 45A TO220FM

MOSFET N-CH 200V 45A TO220FM

Supplier's Site

Technical Specifications

  ROHM Semiconductor USA, LLC ROHM Semiconductor GmbH Win Source Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number RCX450N20 RCX450N20 1091661-RCX450N20 RCX450N20-ND RCX450N20 RCX450N20 687-RCX450N20 RCX450N20
Product Name 10V Drive Nch MOSFET 10V Drive Nch MOSFET TRANSISTORS - Transistors - FETs, MOSFETs - RF - RCX450N20 Single FETs, MOSFETs Single FETs, MOSFETs MOSFET MOSFET N-CH 200V 45A TO220 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 200 volts 200 volts 200 volts 200 volts 200 volts
IDSS 45000 milliamps 45000 milliamps 45000 milliamps
PD 40000 milliwatts 40000 milliwatts 2230 to 40000 milliwatts 2230 milliwatts 2230 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) 150 C (302 F) 150 C (302 F) 150 C (302 F)
Unlock Full Specs
to access all available technical data