R6030KNX is Low on-resistance and ultra fast switching speed Power MOSFET.
R6030KNX is Low on-resistance and ultra fast switching speed Power MOSFET.
N-Channel 600V 30A (Tc) 86W (Tc) Through Hole TO-220FM
MOSFET N-CH 600V 30A TO220FM Product overview: R6030KNX from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 30A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 30A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-R6030KNX can be used for catalog matching and distributor lookup.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 1324588-R6030KNX
Category: Discrete Semiconductor Products>Transistors
Packaging: Bulk
Standard Package: 500
Mounting: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 86W (Tc)
Supplier Device Package: TO-220FM
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2350 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-220-3 Full Pack
ECCN: EAR99
Fake Threat In the Open Market: 82
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: R6030KNXTR,R6030KNXD
Base Product Number: R6030
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: ROHS3 Compliant
MOSFET, N-CH, 600V, 30A, TO-220FM; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.115ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power RoHS Compliant: Yes
MOSFET N-CH 600V 30A TO220FM
| ROHM Semiconductor USA, LLC | ROHM Semiconductor GmbH | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Power MOSFET | Power MOSFET | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | R6030KNX | R6030KNX | R6030KNX-ND | 278-R6030KNX | 1324588-R6030KNX | 99Y2414 | R6030KNX | R6030KNX |
| Product Name | Nch 600V 30A Power MOSFET | 600V 30A TO-220FM, High-speed switching Power MOSFET | Single FETs, MOSFETs | 600V 30A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Mosfet, N-Ch, 600V, 30A, To-220Fm; Transistor Polarity Rohm | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 600 volts | 600 volts | ||||||
| IDSS | 30000 milliamps | 30000 milliamps | 30000 milliamps | |||||
| QG | 56 nC | 56 nC | ||||||
| PD | 86000 milliwatts | 86000 milliwatts | 86 milliwatts | 86000 milliwatts |