ROHM Semiconductor GmbH Nch 200V 30A Power MOSFET RCJ300N20

Description
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Description
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Datasheet
Datasheet Summary
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RCJ300N20 is an N-channel 200V 30A power MOSFET in an SC-83 package, designed for switching power supplies and automotive motor and solenoid drives. It has a maximum drain-source on-resistance of 80mΩ at 25°C and 180mΩ at 125°C, a continuous drain current of 30A at 25°C, and a power dissipation of 166W at 25°C. The device is 100% avalanche tested with a single-pulse avalanche energy rating of 72.8mJ and includes a body diode with a reverse recovery time of 110ns at 15A. It is RoHS compliant and has a junction temperature range of -55°C to +150°C. The thermal resistance from junction to case is 0.75°C/W, and from junction to ambient is 80°C/W on an FR4 PCB.

Datasheet Summary
Powered by GS/AI

RCJ300N20 is an N-channel 200V 30A power MOSFET in an SC-83 package, designed for switching power supplies and automotive motor and solenoid drives. It has a maximum drain-source on-resistance of 80mΩ at 25°C and 180mΩ at 125°C, a continuous drain current of 30A at 25°C, and a power dissipation of 166W at 25°C. The device is 100% avalanche tested with a single-pulse avalanche energy rating of 72.8mJ and includes a body diode with a reverse recovery time of 110ns at 15A. It is RoHS compliant and has a junction temperature range of -55°C to +150°C. The thermal resistance from junction to case is 0.75°C/W, and from junction to ambient is 80°C/W on an FR4 PCB.

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Nch 200V 30A Power MOSFET - RCJ300N20 - ROHM Semiconductor GmbH
Willich, Germany
Nch 200V 30A Power MOSFET
RCJ300N20
Nch 200V 30A Power MOSFET RCJ300N20
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Supplier's Site Datasheet
10V Drive Nch MOSFET - RCJ300N20 - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
10V Drive Nch MOSFET
RCJ300N20
10V Drive Nch MOSFET RCJ300N20
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH ROHM Semiconductor USA, LLC
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET)
Product Number RCJ300N20 RCJ300N20
Product Name Nch 200V 30A Power MOSFET 10V Drive Nch MOSFET
Polarity N-Channel N-Channel
V(BR)DSS 200 volts 200 volts
IDSS 30000 milliamps 30000 milliamps
QG 60 nC
PD 40000 milliwatts 40000 milliwatts
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