Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
MOSFET N-CH 250V 10A TO220FM Product overview: RCX100N25 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 250V, 10A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 250V, 10A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-RCX100N25 can be used for catalog matching and distributor lookup.
N-Channel 250V 10A (Ta) 40W (Tc) Through Hole TO-220FM
Win Source Part Number: 1168900-RCX100N25
Category: Discrete Semiconductor Products>Transistors
Package: Bulk
Standard Package: 500
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Power Dissipation (Max): 40W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FM
Vgs (Max): ±30V
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Rohm Semiconductor
Base Product Number: RCX100
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 250V 10A TO220FM
| ROHM Semiconductor USA, LLC | ROHM Semiconductor GmbH | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | RCX100N25 | RCX100N25 | 278-RCX100N25 | RCX100N25-ND | 1168900-RCX100N25 | RCX100N25 | RCX100N25 |
| Product Name | 10V Drive Nch MOSFET | 10V Drive Nch MOSFET | 250V 10A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 250 volts | 250 volts | |||||
| IDSS | 10000 milliamps | 10000 milliamps | |||||
| PD | 40000 milliwatts | 40000 milliwatts | 40 milliwatts | 40000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | 150 C (302 F) | 150 C (302 F) |
