MOSFET N-CH 600V 76A TO247 Product overview: R6076ENZ4C13 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 76A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 76A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-R6076ENZ4C13 can be used for catalog matching and distributor lookup.
N-Channel 600V 76A (Tc) 735W (Tc) Through Hole TO-247
Win Source Part Number: 1087452-R6076ENZ4C13
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 44.4A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 735W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 73 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Affected
HTSUS: 8541.29.0095
Mfr: Rohm Semiconductor
Other Names: 846-R6076ENZ4C13
Base Product Number: R6076
Drive Voltage (Max Rds On, Min Rds On): 10V
MOSFET N-CH 600V 76A TO247
MOSFET NCH 600V 76A POWER MOSFET
MOSFET, N-CH, 600V, 76A, 150DEG C, 735W; Transistor Polarity:N Channel; Continuous Drain Current Id:76A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.038ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
MOSFET N-CH 600V 76A TO247
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-R6076ENZ4C13 | 846-R6076ENZ4C13-ND | 1087452-R6076ENZ4C13 | R6076ENZ4C13 | R6076ENZ4C13 | 38AH5904 | R6076ENZ4C13 |
| Product Name | 600V 76A MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 600V, 76A, 150Deg C, 735W; Transistor Polarity Rohm | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| MOSFET Operating Mode | Enhancement | ||||||
| PD | 735 milliwatts | 735000 milliwatts | 735000 milliwatts | ||||
| TJ | 150 C (302 F) | 150 C (302 F) | 150 C (302 F) | ||||
| Package Type | Tube | TO-247; TO-247-3 | TO-247; SOT3 | TO-247; TO-247-3 | TO-3 | Through Hole |