ROHM Semiconductor USA, LLC Single FETs, MOSFETs R6076ENZ4C13

MOSFET N-CH 600V 76A TO247

Win Source Part Number: 1087452-R6076ENZ4C13
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 44.4A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 735W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 73 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Affected
HTSUS: 8541.29.0095
Mfr: Rohm Semiconductor
Other Names: 846-R6076ENZ4C13
Base Product Number: R6076
Drive Voltage (Max Rds On, Min Rds On): 10V

N-Channel 600V 76A (Tc) 735W (Tc) Through Hole TO-247

MOSFET N-CH 600V 76A TO247 Product overview: R6076ENZ4C13 from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 76A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 76A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-R6076ENZ4C13 can be used for catalog matching and distributor lookup.