RF4E080BN is an N-channel MOSFET designed for switching applications, featuring a 30 V drain-source voltage rating and a continuous drain current of ±8 A. It is packaged in a DFN2020-8S (HUML2020L8) surface-mount case with a maximum power dissipation of 2.0 W and a junction temperature range of -55 to +150 °C. The device has a maximum on-resistance of 17.6 mΩ at 10 V gate-source voltage and 24.6 mΩ at 4.5 V, and is RoHS compliant and halogen-free. It is 100% Rg and UIS tested, with a thermal resistance junction-to-ambient of 62.5 °C/W when mounted on a 40×40×0.8 mm copper board.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Manufacturer: Rohm Semiconductor
Win Source Part Number: 741128-RF4E080BN
Manufacturer Homepage: www.rohm.com
Reference case: BGA
Reference Date Code: 13+Rohs
Popularity: Low
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance
Product overview: RF4E080BN from ROHM Semiconductor is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-RF4E080BN can be used for catalog matching and distributor lookup.
| ROHM Semiconductor GmbH | ROHM Semiconductor USA, LLC | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | RF4E080BN | RF4E080BN | 741128-RF4E080BN | 285-RF4E080BN |
| Product Name | 4.5V Drive Nch MOSFET | 4.5V Drive Nch MOSFET | TRANSISTORS - Transistors - FETs, MOSFETs - RF - RF4E080BN | MOSFET Transistor |
| Polarity | N-Channel | N-Channel | ||
| V(BR)DSS | 30 volts | 30 volts | ||
| IDSS | 8000 milliamps | 8000 milliamps | ||
| PD | 2000 milliwatts | 2000 milliwatts |
