ROHM Semiconductor GmbH Nch 200V 20A Power MOSFET RCJ200N20

Description
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Description
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.
Datasheet
Datasheet Summary
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The RCJ200N20 is an N-channel 200V, 20A power MOSFET in an SC-83 package, designed for switching power supplies and automotive motor and solenoid drives. It features a maximum on-resistance of 130mΩ at 25°C, a continuous drain current of ±20A at 25°C, and a power dissipation of 106W. The device is tested for 100% avalanche endurance with 32.3mJ single-pulse energy and defined by a junction temperature range of -55°C to 150°C. It is RoHS compliant and supplied in taped reels of 1,000 pieces with a reel size of 330mm. Thermal resistance from junction to case is 1.17°C/W, and to ambient is 80°C/W on a standard FR4 PCB.

Datasheet Summary
Powered by GS/AI

The RCJ200N20 is an N-channel 200V, 20A power MOSFET in an SC-83 package, designed for switching power supplies and automotive motor and solenoid drives. It features a maximum on-resistance of 130mΩ at 25°C, a continuous drain current of ±20A at 25°C, and a power dissipation of 106W. The device is tested for 100% avalanche endurance with 32.3mJ single-pulse energy and defined by a junction temperature range of -55°C to 150°C. It is RoHS compliant and supplied in taped reels of 1,000 pieces with a reel size of 330mm. Thermal resistance from junction to case is 1.17°C/W, and to ambient is 80°C/W on a standard FR4 PCB.

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Nch 200V 20A Power MOSFET - RCJ200N20 - ROHM Semiconductor GmbH
Willich, Germany
Nch 200V 20A Power MOSFET
RCJ200N20
Nch 200V 20A Power MOSFET RCJ200N20
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications. Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Supplier's Site Datasheet
10V Drive Nch MOSFET - RCJ200N20 - ROHM Semiconductor USA, LLC
Santa Clara, CA, USA
10V Drive Nch MOSFET
RCJ200N20
10V Drive Nch MOSFET RCJ200N20
Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Power MOSFETs are made as low ON-resistance devices by the micro-processing technologies useful for wide range of applications.Broad lineup covering compact types, high-power types and complex types to meet various needs in the market.

Supplier's Site Datasheet

Technical Specifications

  ROHM Semiconductor GmbH ROHM Semiconductor USA, LLC
Product Category Power MOSFET Metal-Oxide Semiconductor FET (MOSFET)
Product Number RCJ200N20 RCJ200N20
Product Name Nch 200V 20A Power MOSFET 10V Drive Nch MOSFET
Polarity N-Channel N-Channel
V(BR)DSS 200 volts 200 volts
IDSS 20000 milliamps 20000 milliamps
QG 40 nC
PD 40000 milliwatts 40000 milliwatts
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